SOI二极管型非制冷红外焦平面结构的改进设计

蒋文静; 欧文; 明安杰; 刘战锋; 袁烽

doi:doi:10.3724/sp.j.1010.2014.00218

红外与毫米波学报, 2014, 33 (3): 218, 网络出版: 2014-06-30

SOI二极管型非制冷红外焦平面结构的改进设计

Improved structure for SOI diode uncooled infrared focal plane arrays

论文大纲

蒋文静欧文明安杰刘战锋袁烽

作者单位

中国科学院微电子所, 器件与集成技术重点实验室,北京100029

绝缘衬底上的硅二极管填充系数红外焦平面 SOI diode fill-factor infrared focal plane arrays(IR FPA)

摘要

在绝缘衬底上的硅(SOI)制备的二极管型非制冷红外焦平面是利用单晶硅PN结二极管作为温度探测器, 比其它类型非制冷红外焦平面具有自己的独特优势.描述了传统型像素的结构与特性, 并提出一种改进型结构.在传统的像素结构中, 红外吸收结构直接覆盖于二极管表面, 其填充系数仅为21%.改进后的结构将红外吸收层悬空并覆盖整个像素表面, 使吸收结构能够达到80%, 大大提高了器件的吸收率.计算结果也显示改进后的结构在像素尺寸为35μm×35μm时, 器件的灵敏度可达到 7.75×10-3V/K, 等效功率噪声(NETD)可减小至43mK(f/10.0).同时, ANSYS的仿真结果也表明改进后的结构在吸收率上的提高, 证明了此结构的可行性.

Abstract

The silicon-on-insulator(SOI) diode uncooled infrared focal plane array(IR FPA) uses single-crystal silicon PN junction diodes as a temperature sensor, and has various advantages over other MEMS-based uncooled IR FPAs. The basic principle and the advances of the two different SOI diode uncooled IR FPA are describes, including operation of the diode temperature sensor, the design of the pixel structure, the theory calculation and the simulation results. The improved structure, the IR absorbing structure was made in the upper level to cover almost the entire pixel area, in which the fill factor can increase from 21% to 80%. The calculated results show that the sensitivity of the improved structure raises to 7.75×10-3V/K and the noise equivalent temperature difference(NETD) decreases to 43mK(f/1.0) in a 35μm×35μm micromachined structure, which is close to the international advanced level. Meanwhile, the simulation results also confirm the improved performance and the possibility for large format uncooled IR FPAs.

参考文献

[1] Ishikawa T, Ueno M, Endo K, et al. Low-cost 320×240 uncooled IRFPA using a conventional silicon IC process［J］. Proc. SPIE, 1999, 3689, 556-564.

[2] Kosasayama Y, Sugino T, Ohta Y, et al. Pixel scaling for SOI-diode uncooled infrared focal plane arrays［J］. Proc. SPIE, 2004. 5406, 504-511.

[3] Li C, Han C J, Skidmore G D, et al. DRS uncooled VOx infrared detector development and production status［J］. Proc. SPIE, 2010, Vol. 7660, 76600V.

[4] Miller R G J, Stace B C. The experimental method of infrared spectroscopy［M］. CHINA MACHINE PRESS, 1985, 66-68.

[5] Popova S I, Tolstych T S, Vorobev V T. Optical characteristics of amorphous SiO2 in the region 1400-200cm-1［J］. OPtika SPektrose, 1972, 33, 801-803.

[6] Biao Li. Design and simulation of an uncooleddouble-cantilever microbolometer with the potential for~mK NETD［J］. Sensors and Actuators A, 2004, 112, 351-359.

[7] Kruse P W. Uncooled Thermal Imaging, Arrays Systems and Applications［M］. SPIE Press, 2001, Bellingham, WA.

[8] Selim Eminoglu, Deniz Sabuncuoglu Tezcan, Yusuf Tanrikulu M, et al. Low-cost uncooled infrared detectors in CMOS process［J］. Sensors and Actuators A, 2003, 109, 102-113.

蒋文静, 欧文, 明安杰, 刘战锋, 袁烽. SOI二极管型非制冷红外焦平面结构的改进设计[J]. 红外与毫米波学报, 2014, 33(3): 218. JIANG Wen-Jing, OU Wen, MING An-Jie, LIU Zhan-Feng, YUAN Feng. Improved structure for SOI diode uncooled infrared focal plane arrays[J]. Journal of Infrared and Millimeter Waves, 2014, 33(3): 218.

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