[1] 向世明，倪国强. 光电子成像器件原理［M］. 北京：国防工业出版社，1999.

    XIANG Shi-ming, NI Guo-qiang. The principle of photoelectronic imaging devices［M］. Beijing: National Defence Press, 1999. (in Chinese)

[2] 冯驰，向世明，高景华，等. GaAs与玻璃窗口热压粘接工艺设计［J］. 真空电子技术，2006，6：40-41.

    FENG Chi, XIANG Shi-ming, GAO Jing-hua, et al. Technology design of thermal-compression bonding GaAs with glass window［J］. Vacuum Electronics, 2006,6:40-41. (in Chinese with an English abstract)

[3] . Oxidation and carbon contamination in GaAs(100) wet treatments[J]. Materialstoday, 1999, 573: 145-150.

[4] . Atomic and electronic engineering of P-GaAs-(Cs, O) vacuum interface[J]. AIP, 2001, 570: 901-907.

[5] . Prepa-ration and operation of hydrogen cleaned GaAs(100) negative electron affinity photocathodes[J]. J. Vac. Sci.Technol.A, 1999, 17(3): 823-831.

[6] . Cesiumoxide-GaAs interface and layer thickness in NEA surface formation[J]. SPIN, 2000, 570: 916-919.

[7] 向世明.微光像增强器光阴极灵敏度理论极限问题研究［J］.应用光学，2008，29(1)：48-51.

    XIANG Shi-ming. Theoretical limit for photoca-thode sensitivity of image intensifier［J］. Journal of Applied Optics, 2008,29(1):48-51. (in Chinese with an English abstract)

[8] 承欢，江剑平. 阴极电子学［M］.陕西：西北电讯工程学院出版社，1986.

    CHENG Huan, JIANG Jian-ping. Photocathode electronics［M］. Shaanxi: Press of Northwest Institute of Telecommunication Engineering, 1986. (in Chinese)

[9] 杜晓晴，常本康，宗志园，等. NEA光电阴极的表面模型［J］. 红外技术，2003，25(1)：68-71.

    DU Xiao-qing, CHANG Ben-kang, ZONG Zhi-yuan, et al. Surface models for NEA photocathode［J］. Infrared Technology, 2003,25(1):68-71. (in Chinese with an English abstract)