中国激光, 2009, 36 (8): 1957, 网络出版: 2009-08-13
大功率半导体激光器阵列的稳态和瞬态热行为
Static and Transient Thermal Behavior of High Power Semiconductor Lasers
激光器 半导体激光器 热行为 有限单元法 激光器巴条 可靠性 lasers semiconductor laser thermal behavior finite element method laser bar reliability
摘要
国家自然科学基金(50528506)、中国科学院计划和瞬态光学与光子技术国家重点实验室开放基金资助课题。
Abstract
High power semiconductor lasers have found increasing applications in many areas. The junction temperature rise may not only affect output power, slope efficiency, threshold current and lifetime, but also cause spectral broadening and wavelength shift, which makes thermal management one of the major obstacles of pump laser development. It is more and more crucial to carry out thermal design and optimization. This paper studied the steady and transient thermal behavior of a single-bar CS-packaged 60W 808nm laser in continuous-wave state using numerical analysis method and experiments. Time constants, as well as thermal resistance and its compositions were quantificationally analyzed. Moreover, high power semiconductor lasers were produced based on the thermal design and optimization.
袁振邦, 王警卫, 吴迪, 陈旭, 刘兴胜. 大功率半导体激光器阵列的稳态和瞬态热行为[J]. 中国激光, 2009, 36(8): 1957. Yuan Zhenbang, Wang Jingwei, Wu Di, Chen Xu, Liu Xingsheng. Static and Transient Thermal Behavior of High Power Semiconductor Lasers[J]. Chinese Journal of Lasers, 2009, 36(8): 1957.