[1] Lee S M, Kwon J H, Kwon S, et al. A review of flexible OLEDs toward highly durable unusual displays[J]. IEEE Transactions on Electron Devices, 2017, 64(5): 1922-1931.

[2] Dergez D, Schalko J, Bittner A, et al. Fundamental properties of a-SiNx…H thin films deposited by ICP-PECVD for MEMS applications[J]. Applied Surface Science, 2013, 284(11): 348-353.

[3] Hu J J, Ge Z Y, Piquette A, et al. Design and fabrication of a combined three-layer coating including gradient refractive index films for broadband antireflection on silicon[J]. Microwave and Optical Technology Letters, 2014, 56(1): 256-259.

[4] Gurugubelli V K, Karmalkarb S. Effective medium theory based analytical models for the potential and field distributions in arrays of nanoscale junctions[J]. Journal of Applied Physics, 2017, 122(2): 024502.

[5] Zhang X J, Wu Y. Effective medium theory for anisotropic metamaterials[J]. Scientific Reports, 2015, 5: 7892.

[6] Kelzenberg M D, Boettcher S W, Petykiewicz J A. et al. Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications[J]. Nature Materials, 2010, 9(3): 239-244.

[7] Yu Z F, Raman A, Fan S H. Nanophotonic light-trapping theory for solar cells[J]. Applied Physics A, 2011, 105(2): 329-339.

[8] Sahli M, Correia J, Ahzi S, et al. Multi-physics modeling and simulation of heat and electrical yield generation in photovoltaics[J]. Solar Energy Materials and Solar Cells, 2018, 180: 358-372.

[9] Baker-Finch S C, McIntosh K R. Reflection of normally incident light from silicon solar cells with pyramidal texture[J]. Progress in Photovoltaics: Research and Applications, 2011, 19(4): 406-416.

[10] Sun C H, Jiang P, Jiang B. Broadband moth-eye antireflection coatings on silicon[J]. Applied Physics Letters, 2008, 92(6): 061112.

[11] 朱晓龙, 肖峻, 马孜. 氧化铪薄膜的宽光谱光学特性研究[J]. 激光与光电子学进展, 2016, 53(3): 033101.

    Zhu X L, Xiao J, Ma Z. Wide spectrum optical properties for HfO2 films[J]. Laser & Optoelectronics Progress, 2016, 53(3): 033101.

[12] 高淑雅, 孔祥朝, 张方辉, 等. 有机电致发光器件薄膜封装研究进展[J]. 液晶与显示, 2012, 27(2): 198-203.

    Gao S Y, Kong X Z, Zhang F H, et al. Research progress of thin film encapsulation of organic light-emitting devices[J]. Chinese Journal of Liquid Crystals and Displays, 2012, 27(2): 198-203.

[13] 刘阳, 张彬祥, 黄楚佳. 柔性OLED薄膜封装技术分析[J]. 光电子技术, 2017, 37(2): 139-145.

    Liu Y, Zhang B X, Huang C J. Analysis of thin film encapsulation technology of flexible OLED[J]. Optoelectronic Technology, 2017, 37(2): 139-145.

[14] 周忠伟, 李民, 徐苗, 等. 原子层沉积方法制备低温多层Al2O3/TiO2复合封装薄膜的研究[J]. 液晶与显示, 2016, 31(6): 532-539.

    Zhou Z W, Li M, Xu M, et al. Low-temperature multi-layer Al2O3/TiO2 composite encapsulation thin film by atomic layer deposition[J]. Chinese Journal of Liquid Crystals and Displays, 2016, 31(6): 532-539.

[15] 黄燕超. PECVD法制备SiO2增透减反涂层的研究[D]. 大连: 大连交通大学, 2014.

    Huang YC. The study of the preparation of silicon dioxide antireflection coating by PECVD[D]. Dalian: Dalian Jiao Tong University, 2014.

[16] 张檀威. SiO2和Si3N4薄膜的PECVD沉积及在半导体光电子器件中的应用研究[D]. 北京: 北京邮电大学, 2010.

    Zhang TW. Research on deposition of SiO2 and Si3N4 thin film by PEVCD and the application in semiconductor optoelectronic device[D]. Beijing: Beijing University of Posts and Telecommunications, 2010.

[17] 胡宇. 低温生长SiO2钝化膜及其在太阳电池上的应用[D]. 上海: 上海交通大学, 2009.

    HuY. SiO2 passivation film grown at low temperature and its application to the solar cell[D]. Shanghai: Shanghai Jiao Tong University, 2009.

[18] Raut H K, Ganesh V A, Nairb A S. et al. Anti-reflective coatings: a critical, in-depth review[J]. Energy & Environmental Science, 2011, 4(10): 3779-3804.

[19] Top M, Schonfeld S, Fahlteich J. et al. Hollow-cathode activated PECVD for the high-rate deposition of permeation barrier films[J]. Surface & Coatings Technology, 2017, 314: 155-159.

[20] Wuu D S, Lo W C, Chiang C C, et al. Plasma-deposited silicon oxide barrier films on polyethersulfone substrates: temperature and thickness effects[J]. Surface & Coatings Technology, 2005, 197(2/3): 253-259.

[21] Lee J W. MacKenzie K D, Johnson D, et al. Development of low temperature silicon nitride and silicon dioxide films by inductively-coupled plasma chemical vapor deposition[J]. Compound Semiconductor Surface Passivation and Novel Device Processing, 1999, 573: 69-79.

[22] Engelhardt J, Hahn G, Terheiden B. Multifunctional ICP-PECVD silicon nitride layers for high-efficiency silicon solar cell applications[J]. Energy Procedia, 2015, 77: 786-790.

[23] . s1-[J]. Rayleigh L. On reflection of vibrations at the confines of two media between which the transition is gradual. Proceedings of the London Mathematical Society, 1879, 11(1): 51-56.

[24] Grüniger A, Bieder A, Sonnenfeld A, et al. Influence of film structure and composition on diffusion barrier performance of SiOx thin films deposited by PECVD[J]. Surface and Coatings Technology, 2006, 200(14/15): 4564-4571.

[25] Wolf R, Wandel K, Boeffel C. et al. Moisture barrier films deposited on PET by ICPECVD of SiNx[J]. Plasma Processes and Polymers, 2007, 4(s1): 185-189.