电子轰击型（electron bombarded，EB）CMOS传感器工艺缺陷导致图像出现盲元，对图像质量影响较大。提出了一种基于多幅图像交叉计算的盲元检测新算法。对不同平均亮度的无目标图像，通过设置不同阈值，对图像进行二值化处理；再对多幅二值化图像按“亮点”位置进行交叉“相与”计算，生成盲元标记模板图，最后按盲元位置进行分类和取舍，得到最终盲元标记模板。最终盲元标记模板信息，为评价EBCMOS传感器品质和实际后续产品中盲元补偿提供可靠依据。

Electron bombarded (EB) CMOS sensor process defects cause blind elements in the image, which has a greater impact on image quality. A new blind element detection algorithm based on cross calculation of multiple images was proposed. For untargeted images with different illumination brightness, by setting different thresholds, the image was binarized; then multiple binarized images were calculated according to the position of “bright spots”, and the blind element marking template image was generated. Finally, classification and selection were performed according to the position of blind element, and the final blind element mark template was obtained. The final blind element mark template information provided a reliable basis for evaluating the quality of EBCMOS sensor and the blind element compensation in actual follow-up products.