半导体光电, 2020, 41 (2): 169, 网络出版: 2020-06-17
TDI图像传感器横向抗晕栅极电压与满阱容量关系研究
Relationship between Voltage of Lateral Anti-blooming Gate and Full Well Capacity in TDI Image Sensor
基本信息
DOI: | 10.16818/j.issn1001-5868.2020.02.004 |
中图分类号: | TN386.1 |
栏目: | 光电器件 |
项目基金: | 国家自然科学基金项目(11975066). |
收稿日期: | 2019-12-23 |
修改稿日期: | -- |
网络出版日期: | 2020-06-17 |
通讯作者: | 王欣洋 (wangxinyang@ciomp.ac.cn) |
备注: | -- |
曲杨, 王欣洋, 周泉, 常玉春. TDI图像传感器横向抗晕栅极电压与满阱容量关系研究[J]. 半导体光电, 2020, 41(2): 169. QU Yang, WANG Xinyang, ZHOU Quan, CHANG Yuchun. Relationship between Voltage of Lateral Anti-blooming Gate and Full Well Capacity in TDI Image Sensor[J]. Semiconductor Optoelectronics, 2020, 41(2): 169.