半导体光电, 2020, 41 (2): 169, 网络出版: 2020-06-17
TDI图像传感器横向抗晕栅极电压与满阱容量关系研究
Relationship between Voltage of Lateral Anti-blooming Gate and Full Well Capacity in TDI Image Sensor
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曲杨, 王欣洋, 周泉, 常玉春. TDI图像传感器横向抗晕栅极电压与满阱容量关系研究[J]. 半导体光电, 2020, 41(2): 169. QU Yang, WANG Xinyang, ZHOU Quan, CHANG Yuchun. Relationship between Voltage of Lateral Anti-blooming Gate and Full Well Capacity in TDI Image Sensor[J]. Semiconductor Optoelectronics, 2020, 41(2): 169.
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