TDI图像传感器横向抗晕栅极电压与满阱容量关系研究

时间延时积分CMOS图像传感器(TDI-CIS)具有优良的微光探测能力, 可应用于航空探测及卫星遥感等领域。然而, 在入射光强较强时, TDI-CIS容易出现光晕(Blooming)现象, 影响观测效果。首先分析了光晕产生的机理; 然后基于两种传统的抗晕结构, 设计出一种具有沿垂直方向布局的长方形横向抗晕栅的TDI-CIS; 通过成像实验发现横向抗晕栅极电压与抗晕效果及满阱容量(FWC)之间呈负相关关系; 最后通过实验得到所设计TDI-CIS的最优抗晕栅极电压值为2.1V。

Abstract

Due to its excellent detection ability under low light illumination, time delay integration CMOS image sensor (TDI-CIS) can be applied in aviation detection and satellite remote sensing. However, it is easy to appear blooming phenomenon to affect observation when TDI-CIS is under higher intensity illumination. In this paper, the mechanism of blooming is introduced firstly and a TDI-CIS with rectangle lateral anti-blooming gate which is arranged in vertical direction based on two different anti-blooming structures is designed. Imaging tests indicate that the voltage of anti-blooming gate (VABG) is negatively corrected with anti-blooming and full well capacity (FWC). Finally, the optimal VABG of 2.1V is obtained.

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曲杨, 王欣洋, 周泉, 常玉春. TDI图像传感器横向抗晕栅极电压与满阱容量关系研究[J]. 半导体光电, 2020, 41(2): 169. QU Yang, WANG Xinyang, ZHOU Quan, CHANG Yuchun. Relationship between Voltage of Lateral Anti-blooming Gate and Full Well Capacity in TDI Image Sensor[J]. Semiconductor Optoelectronics, 2020, 41(2): 169.

TDI图像传感器横向抗晕栅极电压与满阱容量关系研究

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