红外与激光工程, 2002, 31 (1): 55, 网络出版: 2006-04-28
激光辐照对长波HgCdTe光导探测器电学参数的影响
Changes of the electric parameters of LWIR HgCdTe PC detector by laser irradiation
长波HgCdTe光导探测器 激光辐照 电阻-温度特性 拟合 Long-wave HgCdTe PC detector Laser irradiation Resistance-temperature characteristic Fit
摘要
对长波HgCdTe光导探测器进行了低于其永久损伤阈值的变功率激光辐照,测量辐照前后器件的电阻-温度特性,用电阻-温度特性研究材料参数的方法对实验结果进行拟合,结果表明辐照后HgCdTe探测器件的组分变大,并由此计算得到探测器性能突变后,器件的电子迁移率与电子浓度均有一定程度减小.认为这可能是由于激光辐照的热效应使N型HgCdTe光导器件的表面及体内均产生的一定的变化所致.
Abstract
The long-wave HgCdTe PC detectors were irradiated by laser beam. The power of the laser beam was changeable and below the permanent damnification threshold of the long-wave HgCdTe PC detectors. The resistance-temperature characteristic of the devices before and after the irradiation is measured, since the resistance-temperature characteristic of the devices can be used to study the electric parameters of the material. This method is used to fit the result of the experiment. It indicates that the proportion of the element Cd become larger. It is concluded that the electronic mobility and electronic concentration of the devices would be reduced after the break of the performance of the detectors due to the irradiation of laser beam.
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朱克学, 张赟, 李向阳, 龚海梅, 方家熊. 激光辐照对长波HgCdTe光导探测器电学参数的影响[J]. 红外与激光工程, 2002, 31(1): 55. 朱克学, 张赟, 李向阳, 龚海梅, 方家熊. Changes of the electric parameters of LWIR HgCdTe PC detector by laser irradiation[J]. Infrared and Laser Engineering, 2002, 31(1): 55.