Influence of APS bias voltage on properties of HfO2 and SiO2 single layer deposited by plasma ion-assisted deposition

Meiping Zhu; Kui Yi; Zhengxiu Fan; Jianda Shao

Chinese Optics Letters, 2011, 9 (2): 023101, Published Online: Mar. 3, 2011

Influence of APS bias voltage on properties of HfO2 and SiO2 single layer deposited by plasma ion-assisted deposition Download： 755次

Meiping Zhu ^1,2Kui Yi ¹Zhengxiu Fan ¹Jianda Shao ¹

Author Affiliations

¹ Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

² Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

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收稿日期:	Jul. 16, 2010
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网络出版日期:	Mar. 3, 2011
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Meiping Zhu, Kui Yi, Zhengxiu Fan, Jianda Shao. Influence of APS bias voltage on properties of HfO2 and SiO2 single layer deposited by plasma ion-assisted deposition[J]. Chinese Optics Letters, 2011, 9(2): 023101.