Chinese Optics Letters, 2011, 9 (2): 023101, Published Online: Mar. 3, 2011
Influence of APS bias voltage on properties of HfO2 and SiO2 single layer deposited by plasma ion-assisted deposition Download: 755次
Suppl. Mat.
Meiping Zhu, Kui Yi, Zhengxiu Fan, Jianda Shao. Influence of APS bias voltage on properties of HfO2 and SiO2 single layer deposited by plasma ion-assisted deposition[J]. Chinese Optics Letters, 2011, 9(2): 023101.