Chinese Optics Letters, 2011, 9 (2): 023101, Published Online: Mar. 3, 2011  

Influence of APS bias voltage on properties of HfO2 and SiO2 single layer deposited by plasma ion-assisted deposition Download: 755次

Author Affiliations
1 Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
2 Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
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Meiping Zhu, Kui Yi, Zhengxiu Fan, Jianda Shao. Influence of APS bias voltage on properties of HfO2 and SiO2 single layer deposited by plasma ion-assisted deposition[J]. Chinese Optics Letters, 2011, 9(2): 023101.

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Meiping Zhu, Kui Yi, Zhengxiu Fan, Jianda Shao. Influence of APS bias voltage on properties of HfO2 and SiO2 single layer deposited by plasma ion-assisted deposition[J]. Chinese Optics Letters, 2011, 9(2): 023101.

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