激光辐照InSb(PV)型探测器的热损伤

赵建君; 宋春荣; 张灵振; 牛燕雄

强激光与粒子束, 2005, 17 (7): 1008, 网络出版: 2021-01-28

激光辐照InSb(PV)型探测器的热损伤

Thermal damage in InSb(PV) detector induced by CW laser

论文大纲

赵建君 ¹宋春荣 ¹张灵振 ¹牛燕雄 ²

作者单位

¹ 军械工程学院,理化教研室,河北,石家庄,050003

² 军械工程学院,光学教研室,河北,石家庄,050003

热损伤 InSb(PV)型探测器高斯光束损伤阈值 Thermal damage InSb(PV) detector Gaussian beam Damage threshold

摘要

在建立高斯型连续激光辐照InSb(PV)型探测器物理模型的基础上,采用近似解析解的形式计算了圆柱形InSb靶板的2维温度场.通过数值分析得出了在激光辐照时,InSb(PV)型探测器的温升与时间的关系,并计算出相应的损伤阈值.研究表明:在强激光连续辐照下,半导体材料InSb会发生熔融损伤,且最早发生于迎光面的光斑中心,激光的功率密度越高,造成破坏所需要的时间越短;对于一定厚度胶层的InSb(PV)型探测器,只有强度大于一定阈值的连续激光辐照才可能发生熔融损伤,越薄的胶层对应的损伤阈值越大.为了增加InSb(PV)型探测器抗激光辐照能力,应该减小胶层厚度.采用该理论计算得到不同功率下的InSb熔融时间为1.57 s和4.54 s,与实验得到的2 s和 4～5 s基本吻合.

Abstract

A physical model of InSb(PV) detector irradiated by CW laser was established. The distribution of temperature was studied by Gaussian beam with 2-D thermal model. The relationship between the temperature transformation and irradiation time was obtained. By numerical method, it was found that the damage of InSb material irradiated by CW laser was melt, and it took place firstly at the center of the laser-facing surface. The higher the laser power was, the less damage time was needed. With the same laser power density, thinner sub needed less irradiation time. For a definite sub, the damage threshold of laser was higher than a certain I_min. Whereas I_min was higher for thinner sub. To improve the anti-irradiation ability, it was necessary to diminish the thickness of sub. Additionally, the calculation times of melt damage by 10.6 μm laser irradiation of different power were 1.57 s and 4.54 s, corresponding to the experimental data of 2 s and 4～5 s.

参考文献

[1] Shen Z H, Zhang S Y, Lu J, et al. Mathematical modeling of laser induced heating and melting in solids[J]. Optic and Laser Technology, 2001, 33:533-537.

[2] Felter T E, Hrubesh L, Kubota A, et al. Laser damage probability studies of fused silica modified by MeV ion implantation[J]. Nuclear Instruments and Methods in Physics Research B, 2003, 27:72-79.

[3] Ngoi B K A, Venkatakrishnan K, Lim E N L, et al. Effect of energy above laser-induced damage threshold in the micromachining of silicon by femtosecond pulse laser[J]. Optic and Lasers in Engineering, 2001, 35:361-369.

[4] 段晓峰, 牛燕雄, 张雏. 半导体材料的激光辐照效应计算和损伤阈值分析[J]. 光学学报, 2004, 24(8):1057-1061.
Duan X F, Niu Y X, Zhang C. Calculation of laser irradiation effect and analysis of laser-induced damage threshold in semiconductor. Acta Optica Sinica, 2004, 24(8):1057-1061.

[5] 陈金宝, 陆启生, 钟海荣, 等. 连续波氧碘激光对光伏型锑化铟探测器的破坏阈值[J]. 强激光与粒子束, 1998, 10(2):221-224.
Chen J B, Lu Q S, Zhong H R, et al. Damage threshold of CW coil to InSb(PV) detector. High Power Laser and Particle Beams, 1998, 10(2):221-224.

[6] 陈金宝 ,陆启生, 舒柏宏, 等. CW CO₂ 激光对PV型InSb 探测器的破坏效应[J]. 激光技术, 2002, 26(1):47-49.
Chen J B, Lu Q S, Shu B H, et al. Damage effect of CW CO₂ laser on PV type InSb detector. Laser Technology, 2002, 26(1):47-49

[7] 蒋志平, 陆启生, 刘泽金. 激光辐照InSb(PV) 型探测器的温升计算[J]. 强激光与粒子束, 1990, 2(2):247-251.
Jiang Z P, Lu Q S, Liu Z J. Calculation of temperature raise in InSb(PV) detector illuminated by laser beam. High Power Laser and Particle Beams, 1990, 2(2):247-251.

[8] 陆启生, 舒柏宏, 蒋志平, 等. 激光辐照InSb 晶体表面产生的龟裂[J]. 强激光与粒子束, 1999, 11(2):201-204.
Lu Q S, Shu B H, Jiang Z P, et al. The crack on InSb crystal surface under laser irradiation. High Power Laser and Particle Beams, 1999, 11(2):201-204.

[9] 曾交龙, 陆启生, 舒柏宏, 等. 1.06 μm连续与脉冲激光对GaAs材料的联合破坏效应[J]. 强激光与粒子束, 1998, 10(2):217-220.
Zeng J L, Lu Q S, Shu B H, et al. Combined damage effect of GaAs irradiated by 1.06 μm CW and pulse laser. High Power Laser and Particle Beams, 1998, 10(2):217-220.

[10] 舒柏宏, 侯静, 陆启生, 等. 砷化镓材料与激光相互作用的实验研究[J]. 红外与激光工程, 1999, 28(1):40-42.
Shu B H, Hou J, Lu Q S, et al. Experimental study of the interaction between laser and GaAs. Infrared and Laser Engineering, 1999, 28(1):40-42.

[11] 强希文, 刘峰, 张建泉, 等. 连续波激光辐照半导体InSb 材料的熔融破坏[J]. 中国激光, 2000, 27(4):372-376.
Qiang X W, Liu F, Zhang J Q, et al. An numerical simulation of the melt-threshold of InSb induced by CW laser beams. Chinese Journal of Lasers, 2000, 27(4):372-376.

[12] 强希文, 刘峰, 张建泉. 红外激光辐照探测器材料温升的计算[J]. 红外与激光工程,1999, 28(3):46-50.
Qiang X W, Liu F, Zhang J Q. Numerical simulations of temperature rise on detector material irradiated by IR laser beam. Infrared and Laser Engineering, 1999, 28(3):46-50.

[13] 强希文, 刘峰, 张建泉, 等. 强激光辐照探测器材料力学效应的解析研究[J]. 红外与激光工程,1999, 28(6):47-51.
Qiang X W, Liu F, Zhang J Q, et al. Analytical investigation on mechanical effects of detector materials induced by laser. Infrared and Laser Engineering, 1999, 28(6):47-51.

赵建君, 宋春荣, 张灵振, 牛燕雄. 激光辐照InSb(PV)型探测器的热损伤[J]. 强激光与粒子束, 2005, 17(7): 1008. ZHAO Jian-jun, SONG Chun-rong, ZHANG Ling-zhen, NIU Yan-xiong. Thermal damage in InSb(PV) detector induced by CW laser[J]. High Power Laser and Particle Beams, 2005, 17(7): 1008.

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