Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability

Yating Wan; Daisuke Inoue; Daehwan Jung; Justin C. Norman; Chen Shang; Arthur C. Gossard; John E. Bowers

doi:doi:10.1364/PRJ.6.000776

Photonics Research, 2018, 6 (8): 08000776, Published Online: Aug. 1, 2018

Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability Download： 706次

Yating Wan ^1,*†Daisuke Inoue ^1,2†Daehwan Jung ^1†Justin C. Norman ³Chen Shang ³Arthur C. Gossard ^3,4John E. Bowers ^3,4

Author Affiliations

¹ Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA

² Institute of Innovative Research, Tokyo Institute of Technology, Tokyo 152-8552, Japan

³ Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA

⁴ Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA

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Yating Wan, Daisuke Inoue, Daehwan Jung, Justin C. Norman, Chen Shang, Arthur C. Gossard, John E. Bowers. Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability[J]. Photonics Research, 2018, 6(8): 08000776.

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Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability Download： 706次

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