Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability

Yating Wan; Daisuke Inoue; Daehwan Jung; Justin C. Norman; Chen Shang; Arthur C. Gossard; John E. Bowers

doi:doi:10.1364/PRJ.6.000776

Photonics Research, 2018, 6 (8): 08000776, Published Online: Aug. 1, 2018

Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability Download： 706次

Yating Wan ^1,*†Daisuke Inoue ^1,2†Daehwan Jung ^1†Justin C. Norman ³Chen Shang ³Arthur C. Gossard ^3,4John E. Bowers ^3,4

Author Affiliations

¹ Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA

² Institute of Innovative Research, Tokyo Institute of Technology, Tokyo 152-8552, Japan

³ Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA

⁴ Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA

Figures & Tables

Fig. 1. Schematic of the epilayer structure. Inset, AFM morphology of the uncapped dots.

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Fig. 2. (a) Schematic illustration and (b) tilted SEM image of one fabricated microring laser; (c) top view of the probed microring under infrared imaging.

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Fig. 3. Measured L-I-V curve of a microring laser with intrinsic active region. The device features an outer ring radius of 15 μm and a ring waveguide width of 4 μm. Inset, zoomed-in view of the L-I curve in the low-injection region.

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Fig. 4. Emission spectra for the same device in Fig. 3 at various injection currents under CW operation at room temperature. Inset, emission spectrum around lasing threshold.

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Fig. 5. Measured L-I curves as a function of the heat sink temperature for two microring lasers with (a) an intrinsic active region and (b) a modulation p-doped active region. Both devices have an outer ring radius of 15 μm and a ring waveguide width of 4 μm. (c) Temperature-dependent threshold current versus heat sink temperature for the two microring lasers, where the dashed lines represent the linear fit to the experimental data.

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Fig. 6. Threshold currents as a function of outer ring radius for microring lasers (a) with an intrinsic active region and a modulation p-doped active region on the GaP/Si, and (b) on GaP/Si substrate and native GaAs substrate with an intrinsic active region.

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Fig. 7. Small-signal modulation responses of the QD ring laser biased from 21 to 86 mA. The fitting curves are drawn using a three-pole fitting function H(f). Inset, L-I-V characteristics from the same device.

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Fig. 8. 3 dB bandwidth f3 dB and relaxation oscillation frequency fr versus square root of the bias current above threshold. Inset, damping rate γ versus squared relaxation oscillation frequency fr. The maximum 3 dB bandwidth limited by K-factor f3 dB,max is 9.7 GHz.

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Fig. 9. (a) Impedance measurement of QD microring laser on Si; (b) equivalent circuit model used for the fitting. Measured and fitted curves of reflection S11 characteristics for reverse (−3 V) and forward (50 mA) biased condition from 0.14 to 5 GHz.

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Yating Wan, Daisuke Inoue, Daehwan Jung, Justin C. Norman, Chen Shang, Arthur C. Gossard, John E. Bowers. Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability[J]. Photonics Research, 2018, 6(8): 08000776.

Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability Download： 706次

Fig. 1. Schematic of the epilayer structure. Inset, AFM morphology of the uncapped dots.

Fig. 2. (a) Schematic illustration and (b) tilted SEM image of one fabricated microring laser; (c) top view of the probed microring under infrared imaging.

Fig. 3. Measured L-I-V curve of a microring laser with intrinsic active region. The device features an outer ring radius of 15 μm and a ring waveguide width of 4 μm. Inset, zoomed-in view of the L-I curve in the low-injection region.

Fig. 4. Emission spectra for the same device in Fig. 3 at various injection currents under CW operation at room temperature. Inset, emission spectrum around lasing threshold.

Fig. 6. Threshold currents as a function of outer ring radius for microring lasers (a) with an intrinsic active region and a modulation p-doped active region on the GaP/Si, and (b) on GaP/Si substrate and native GaAs substrate with an intrinsic active region.

Fig. 7. Small-signal modulation responses of the QD ring laser biased from 21 to 86 mA. The fitting curves are drawn using a three-pole fitting function H(f). Inset, L-I-V characteristics from the same device.

Fig. 8. 3 dB bandwidth f3 dB and relaxation oscillation frequency fr versus square root of the bias current above threshold. Inset, damping rate γ versus squared relaxation oscillation frequency fr. The maximum 3 dB bandwidth limited by K-factor f3 dB,max is 9.7 GHz.

Fig. 9. (a) Impedance measurement of QD microring laser on Si; (b) equivalent circuit model used for the fitting. Measured and fitted curves of reflection S11 characteristics for reverse (−3 V) and forward (50 mA) biased condition from 0.14 to 5 GHz.

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Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability Download： 706次

Fig. 1. Schematic of the epilayer structure. Inset, AFM morphology of the uncapped dots.

Fig. 2. (a) Schematic illustration and (b) tilted SEM image of one fabricated microring laser; (c) top view of the probed microring under infrared imaging.

Fig. 3. Measured L-I-V curve of a microring laser with intrinsic active region. The device features an outer ring radius of 15 μm and a ring waveguide width of 4 μm. Inset, zoomed-in view of the L-I curve in the low-injection region.

Fig. 4. Emission spectra for the same device in Fig. 3 at various injection currents under CW operation at room temperature. Inset, emission spectrum around lasing threshold.

Fig. 6. Threshold currents as a function of outer ring radius for microring lasers (a) with an intrinsic active region and a modulation p-doped active region on the GaP/Si, and (b) on GaP/Si substrate and native GaAs substrate with an intrinsic active region.

Fig. 7. Small-signal modulation responses of the QD ring laser biased from 21 to 86 mA. The fitting curves are drawn using a three-pole fitting function H(f). Inset, L-I-V characteristics from the same device.

Fig. 8. 3 dB bandwidth f3 dB and relaxation oscillation frequency fr versus square root of the bias current above threshold. Inset, damping rate γ versus squared relaxation oscillation frequency fr. The maximum 3 dB bandwidth limited by K-factor f3 dB,max is 9.7 GHz.

Fig. 9. (a) Impedance measurement of QD microring laser on Si; (b) equivalent circuit model used for the fitting. Measured and fitted curves of reflection S11 characteristics for reverse (−3 V) and forward (50 mA) biased condition from 0.14 to 5 GHz.

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