Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability

Yating Wan; Daisuke Inoue; Daehwan Jung; Justin C. Norman; Chen Shang; Arthur C. Gossard; John E. Bowers

doi:doi:10.1364/PRJ.6.000776

Photonics Research, 2018, 6 (8): 08000776, Published Online: Aug. 1, 2018

Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability Download： 707次

Yating Wan ^1,*†Daisuke Inoue ^1,2†Daehwan Jung ^1†Justin C. Norman ³Chen Shang ³Arthur C. Gossard ^3,4John E. Bowers ^3,4

Author Affiliations

¹ Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA

² Institute of Innovative Research, Tokyo Institute of Technology, Tokyo 152-8552, Japan

³ Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA

⁴ Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA

Basic Information

DOI:	10.1364/PRJ.6.000776
中图分类号:	--
栏目:	Quantum Optics
项目基金:	Advanced Research Projects Agency–Energy (ARPA-E)10.13039/100006133（DE-AR0000672）、
收稿日期:	Apr. 13, 2018
修改稿日期:	Jun. 5, 2018
网络出版日期:	Aug. 1, 2018
通讯作者:	Yating Wan (yatingwan@ucsb.edu)
备注:	--

Yating Wan, Daisuke Inoue, Daehwan Jung, Justin C. Norman, Chen Shang, Arthur C. Gossard, John E. Bowers. Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability[J]. Photonics Research, 2018, 6(8): 08000776.

Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability Download： 707次

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