半导体脉冲功率开关的最新进展
任亚东, 李世平, 颜骥, 熊辉, 熊思宇, 余伟, 曾文彬, 张方毅. 半导体脉冲功率开关的最新进展[J]. 强激光与粒子束, 2012, 24(4): 771.
Ren Yadong, Li Shiping, Yan Ji, Xiong Hui, Xiong Siyu, Yu Wei, Zeng Wenbin, Zhang Fangyi. Recent developments of semiconductor pulsed power switch[J]. High Power Laser and Particle Beams, 2012, 24(4): 771.
[1] 余岳辉,梁琳. 脉冲功率器件及其应用[M]. 北京:机械工业出版社,2010.(Yu Yuehui,Liang Lin. Pulse power devices and their applications.Beijing: China Machine Press,2010)
[2] 薄鲁海. 晶闸管在脉冲功率电源中的应用研究[D]. 武汉:华中科技大学,2009.(Bo Luhai. Study on thyristor application in pulse power supply system. Wuhan:Huazhong University of Science and Technology,2009)
[3] 何俊佳,邹积岩. 触发真空开关中初始等离子体的产生和扩展[J]. 高压电器,1996,22(6):3-5.( He Junjia,Zou Jiyan. Production and expansion of primary plasma in triggered vacuum switches. High Voltage Appliances,1996,22(6):3-5)
[4] Frank K, Petzenhauser I, Blell U. Multi-gap pseudospark switches for high voltage applications[J].IEEE Trans on Magnetics, 2007,14(4):968-975.
[5] Pastore R, Kingsley L, Singh H. Reverse blocking capabilility of symme-tric SCRs at high current and high voltage reversals[J].IEEE Trans on Magnetics,1995,7(1):306-311.
[6] Renz G, Holzschuh F, Zeyfang E. PFNs switched with stacked SCRs at 20 kV, 500 J, and 100 Hz rep-rate[J].IEEE Trans on Magnetics,1997, 7(1):390-395.
[7] Spahn E, Buderer G, Wenning W. A compact pulse forming network, base-d on semiconducting switches, for electric gun applications[J].IEEE Trans on Magnetics,1999,35(1):378-382.
[8] 世界最大功率晶闸管问世[J]. 电力电子,2006(5):57.(The World’s maximum power thyristor appeared. Power Electronics,2006(5):57)
[9] 王兆安,黄俊. 电力电子技术[M]. 北京:机械工业出版社,2000.(Wang Zhaoan,Huang Jun. Power electronics technology. Beijing: China Machine Press,2000)
[10] 邱关源,罗先觉. 电路[M]. 北京:高等教育出版社,2006.(Qiu Guanyuan,Luo Xianjue. Circuit. Beijing: Higher Education Press,2006)
[11] 华成英,童诗白. 模拟电子技术基础[M]. 北京:高等教育出版社,2006. (Hua Chengying,Tong Shibai. Basis of analogue electronic technique. Beijing: Higher Education Press,2006)
[12] 汤广福,贺之渊,邓占锋. 基于器件物理特性是的晶闸管阀串联机制系统化研究[J]. 中国电机工程学报,2006, 26(12):39-44.(Tang Guangfu,He Zhiyuan,Deng Zhanfeng. Study on thyristor valve series mechanism based on device physical characteristic. Proceeding of the CSEE,2006, 26(12):39-44)
[13] 李毅梅,钱进. 晶闸管串联电路的问题及在应用中的解决[J]. 湖南冶金职业技术学院学报, 2007,7(2):15-17.(Li Yimei,Qian Jin. Question about thyristor series circuit and solution method.Journal of Hunan Metallurgical Professional Technology College,2007,7(2):15~17)
[14] 赵中原,朱周侠,邱毓昌,等. 高压换流阀可控硅组件均压特性的研究[J]. 电力建设,2002, 23(12):39-41.(Zhao Zhongyuan,Zhu Zhou-xia,Qiu Yuchang,et al. Study on voltage equalizing characters of controlled silicon for HV converter valve. Electric Power Construction,2002,23(12):39-41)
任亚东, 李世平, 颜骥, 熊辉, 熊思宇, 余伟, 曾文彬, 张方毅. 半导体脉冲功率开关的最新进展[J]. 强激光与粒子束, 2012, 24(4): 771. Ren Yadong, Li Shiping, Yan Ji, Xiong Hui, Xiong Siyu, Yu Wei, Zeng Wenbin, Zhang Fangyi. Recent developments of semiconductor pulsed power switch[J]. High Power Laser and Particle Beams, 2012, 24(4): 771.