GaAs/AlGaAs量子阱红外探测器特性非对称性分析
李娜, 李宁, 陆卫, 袁先漳, 李志锋, 窦红飞, 刘京郊, 沈学础, 金莉, 李宏伟, 周均铭, 黄绮. GaAs/AlGaAs量子阱红外探测器特性非对称性分析[J]. 红外与毫米波学报, 2001, 20(6): 411.
李娜, 李宁, 陆卫, 袁先漳, 李志锋, 窦红飞, 刘京郊, 沈学础, 金莉, 李宏伟, 周均铭, 黄绮. ASYMMETRY IN THE CHARACTERISTIC OF GaAs/AlGaAs QUANTUM WELL INFRARED PHOTODETECTOR[J]. Journal of Infrared and Millimeter Waves, 2001, 20(6): 411.
[1] Levine B F. Quantum-well infrared photodetectors. J. Appl. Phys., 1993,74(8),R1
[2] Gunapala S D, Liu J K, Park J S, et al. 9-μm cutoff 256×256 GaAs/AlGaAs quantum well infrared photodetector hand-held camera. IEEE Trans. Electron Devices, 1997, 44(1):51
[3] LI Ning, LI Na, LU Wei, et al. Development of 64×64 GaAs/AlGaAs MQW long-wave infrared FPAs. Journal of Infrared and Millimeter Waves(李宁,李娜,陆卫,等.64×64 元GaAs/AlGaAs多量子阱长波红外焦平面研制,红外与毫米波学报),1999,18(6):427.
[4] Chen C J, Choi K K, Chang W H, et al. Two-color corrugated quantum-well infrared photodetector for remote temperature sensing. Appl. Phys. Lett., 1998,72(1):7
[5] Liu H C, Li J,Thompson J R. Multicolor voltage-tunable quantum-well infrared photodetector. IEEE. Trans. Electron Devices, 1993, 14(12):256
[6] Mahalingμm K, Dorsey D L, Evans K R, et al. The origin gallium desorption transients during AlGaAs/GaAs heterointerface formation by molecular beam epitaxy. Appl.Phys,Lett.,1997,70(23):3143
[7] Levine B F, Bethea C G, Hasnain G, et al., High sensitivity low dark current 10μm GaAs quantum well infrared photodetectors. Appl. Phys, Lett. 1990,56(3):851
[8] Liu H C, Wasilewski Z R, Buchnan M,et al. Segregation of Si doping in GaAs-AlGaAs quantum well and the cause of the asymmetry in the current-voltage characteristics of intersubband infrared detector. Appl. Phys, Lett., 1993, 63(6):761
李娜, 李宁, 陆卫, 袁先漳, 李志锋, 窦红飞, 刘京郊, 沈学础, 金莉, 李宏伟, 周均铭, 黄绮. GaAs/AlGaAs量子阱红外探测器特性非对称性分析[J]. 红外与毫米波学报, 2001, 20(6): 411. 李娜, 李宁, 陆卫, 袁先漳, 李志锋, 窦红飞, 刘京郊, 沈学础, 金莉, 李宏伟, 周均铭, 黄绮. ASYMMETRY IN THE CHARACTERISTIC OF GaAs/AlGaAs QUANTUM WELL INFRARED PHOTODETECTOR[J]. Journal of Infrared and Millimeter Waves, 2001, 20(6): 411.
PDF全文
