Broadband mid-IR antireflective Reuleaux-triangle-shaped hole array on germanium

Haijuan Cheng; Miao Dong; Qinwen Tan; Linghai Meng; Yi Cai; Jie Jiang; Weisheng Yang; Haizheng Zhong; Lingxue Wang

doi:doi:10.3788/COL201917.122401

Chinese Optics Letters, 2019, 17 (12): 122401, Published Online: Nov. 26, 2019

Broadband mid-IR antireflective Reuleaux-triangle-shaped hole array on germanium Download： 989次

Haijuan Cheng ^1,2Miao Dong ¹Qinwen Tan ¹Linghai Meng ³Yi Cai ¹Jie Jiang ²Weisheng Yang ²Haizheng Zhong ³Lingxue Wang ^1,*

Author Affiliations

¹ Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, Key Laboratory of Photoelectronic Imaging Technology and System, Ministry of Education, School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China

² Yunnan KIRO - CH Photonics Co., Ltd., Kunming 650223, China

³ School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China

Figures & Tables

Fig. 1. Optimal simulated transmittance (red line) of the Reuleaux-triangle-shaped hole array on Ge for $T_{1} = 1.1 μ m$ , $R = 1 μ m$ , and $r = 0.8 μ m$ . Inset (a) is a single Reuleaux-triangle-shaped hole, and (b) shows Reuleaux-triangle-shaped holes forming a closely packed hexagonal array (top view). The polarization direction of the incident light is 0° with the x axis.

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Fig. 2. Electric field distributions for a single period of the Reuleaux-triangle-shaped hole array: (a) incident 3–12 μm electromagnetic wave with uniform distribution of field intensity, and (b)–(h) different mid-IR wavelengths passing through the Reuleaux-triangle-shaped holes. The incident light is $T E$ polarized.

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Fig. 3. (a) Photograph and (b) SEM micrograph of the fabricated Ge wafer with a Reuleaux-triangle hole array. (c) SEM side view of two Reuleaux-triangle holes.

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Fig. 4. (a) Transmission spectra of the fabricated element (yellow line), Ge substrate (2 mm thickness, blue line), updated simulated element with nonuniform hole depths (green dot-dashed line), and the maximum theoretical antireflection on one side (red line). (b) The measured transmittance versus incident angle.

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Haijuan Cheng, Miao Dong, Qinwen Tan, Linghai Meng, Yi Cai, Jie Jiang, Weisheng Yang, Haizheng Zhong, Lingxue Wang. Broadband mid-IR antireflective Reuleaux-triangle-shaped hole array on germanium[J]. Chinese Optics Letters, 2019, 17(12): 122401.

Broadband mid-IR antireflective Reuleaux-triangle-shaped hole array on germanium Download： 989次

Fig. 3. (a) Photograph and (b) SEM micrograph of the fabricated Ge wafer with a Reuleaux-triangle hole array. (c) SEM side view of two Reuleaux-triangle holes.

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Broadband mid-IR antireflective Reuleaux-triangle-shaped hole array on germanium Download： 989次

Fig. 3. (a) Photograph and (b) SEM micrograph of the fabricated Ge wafer with a Reuleaux-triangle hole array. (c) SEM side view of two Reuleaux-triangle holes.

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