对InGaAsP/InP单光子雪崩探测器（SPADs）进行了总剂量为10 krad（Si）和20 krad（Si）的γ辐照，并进行了原位和移位测试。辐照后，暗电流和暗计数率有轻微的下降，而探测效率和后脉冲概率基本不变。经过一定时间的室温退火后，这些退化基本恢复，这表明瞬态电离损伤在γ辐照对InGaAsP/InP单光子雪崩探测器的损伤中占主导地位。

InGaAsP/InP single-photon avalanche diodes (SPADs) were gamma-irradiated with total doses of 10 krad (Si) and 20 krad (Si) and tested in situ and shift methods. After irradiation, the dark currents and dark count rates were degraded slightly, whereas the photon detection efficiency and the after pulse probability were basically unchanged. After a certain period of annealing at room temperature, these degradations were essentially recovered, indicating that transient ionization damage dominated in the gamma irradiation of InGaAsP/InP single-photon avalanche diodes.