1 上海理工大学光电信息与计算机工程学院, 上海 200093
2 中国科学院上海光学精密机械研究所薄膜光学实验室, 上海 201800
3 上海理工大学光学仪器与系统教育部工程研究中心, 上海 200093
线性渐变透过率薄膜元件是光刻系统中光可变衰减器的关键元件。采用电子束蒸发实现了近线性248 nm渐变透过率光学薄膜的设计与制备。通过对敏感度进行计算和优化,基于减反膜基础膜系实现了低敏感非规整膜系的设计。采用紫外光控-晶控组合的高精度膜厚监控措施,可使膜厚的控制精度达到0.3%,误差容忍度达到0.5%。在248 nm S偏振光照射下,采用JGS1熔融石英基片以及Al2O3和SiO2膜料制备的透射膜,在入射角为21°~35°的范围内实现了透过率从10%到97.8%的线性调控,满足光可变衰减器的性能需求。
薄膜 线性渐变透过率 薄膜制备
1 中国科学院上海光学精密机械研究所薄膜光学实验室, 上海 201800
2 中国科学院大学材料与光电研究中心, 北京 100049
3 中国科学院上海光学精密机械研究所强激光材料重点实验室, 上海 201800
采用反应电子束蒸发技术在不同氧分压下制备了HfO2薄膜,并采用X射线衍射仪、扫描电子显微镜、椭圆偏振仪、X射线光电子能谱仪、1064 nm弱吸收测试仪、1064 nm激光1-on-1损伤测试系统等,对HfO2薄膜的结构、光学性能、化学组分、吸收性能、抗激光损伤特性和损伤形貌等进行了表征和分析。当沉积温度为200 ℃时,所制备的HfO2薄膜为单斜多晶结构,晶粒尺寸约为10 nm。随着氧分压升高,薄膜的氧化程度随之增大,由化学计量比缺陷主导的薄膜1064 nm弱吸收系数变小,同时薄膜结构变得疏松,折射率随之降低。深入研究后发现,在采用反应电子束蒸发技术制备HfO2薄膜时,提高氧分压有助于抑制膜内纳米吸收缺陷和基底亚表面裂纹,提高HfO2薄膜抗1064 nm激光损伤阈值,对制备出基于HfO2薄膜的高性能光学元器件具有重要的参考价值。
薄膜 反应蒸发 氧分压 抗激光损伤特性
Author Affiliations
Abstract
1 Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
2 University of Chinese Academy of Sciences, Beijing 100049, China
To reveal the physical mechanism of laser ablation and establish the prediction model for figuring the surface of fused silica, a multi-physical transient numerical model coupled with heat transfer and fluid flow was developed under pulsed CO2 laser irradiation. The model employed various heat transfer and hydrodynamic boundary and thermomechanical properties for assisting the understanding of the contributions of Marangoni convention, gravitational force, vaporization recoil pressure, and capillary force in the process of laser ablation and better prediction of laser processing. Simulation results indicated that the vaporization recoil pressure dominated the formation of the final ablation profile. The ablation depth increased exponentially with pulse duration and linearly with laser energy after homogenous evaporation. The model was validated by experimental data of pulse CO2 laser ablation of fused silica. To further investigate laser beam figuring, local ablation by varying the overlap rate and laser energy was conducted, achieving down to 4 nm homogenous ablation depth.
140.3390 Laser materials processing 140.3470 Lasers, carbon dioxide 220.5450 Polishing 140.3538 Lasers, pulsed Chinese Optics Letters
2018, 16(4): 041401
