1 微波毫米波单片集成和模块电路重点实验室，南京2006
2 南京电子器件研究所，南京10016
基于薄膜铌酸锂（Lithium Niobate on insulator， LNOI）材料平台，设计并制备了中心波长1 550 nm、4通道且通道间隔为400 GHz的阵列波导光栅，并完成了LNOI波导端面抛光。测试结果表明，该阵列波导光栅相邻通道间串扰约-7.5 dB，通道非均匀性小于0.5 dB，中心波长1 551.3 nm，但存在较大插入损耗，约27.2 dB。该研究工作对研制高性能LNOI阵列波导光栅具有重要推动作用。
薄膜铌酸锂 阵列波导光栅 波分复用 LNOI arrayed waveguide grating WDM 
Author Affiliations
Abstract
1 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China
2 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
In this Letter, we reported the preliminary results of an integrating periodically capacitive-loaded traveling wave electrode (CL-TWE) Mach–Zehnder modulator (MZM) based on InP-based multiple quantum well (MQW) optical waveguides. The device configuration mainly includes an optical Mach–Zehnder interferometer, a direct current electrode, two phase electrodes, and a CL-TWE consisting of a U electrode and an I electrode. The modulator was fabricated on a 3 in. InP epitaxial wafer by standard photolithography, inductively coupled plasma dry etching, wet etching, electroplating, etc. Measurement results show that the MZM exhibits a 3 dB electro-optic bandwidth of about 31 GHz, a Vπ of 3 V, and an extinction ratio of about 20 dB.
130.3120 Integrated optics devices 250.4110 Modulators 230.4205 Multiple quantum well (MQW) modulators Chinese Optics Letters
2019, 17(6): 061301
微波毫米波单片集成和模块电路重点实验室, 南京电子器件研究所, 南京 210016
研究了基于绝缘体上硅(SOI)单环以及双环谐振器直通端的滤波特性, 分析了直波导-环波导光耦合系数和环间波导光耦合系数对输出特性的影响。本文提出了在谐振器耦合区采用马赫-曾德尔干涉仪(MZI)的改进耦合结构, 在微环腔长1 218 μm的单环和双环滤波器中, 分别在19 mW和9 mW的功率范围内实现谐振器从欠耦合到临界耦合状态的调谐, 在0~26 mW的功率范围内, 双环滤波器实现了谐振波长一个自由谱范围(FSR)的可调谐滤波特性。
绝缘体上硅 微环谐振器 马赫-曾德尔干涉仪 可调谐性 silicon-on-insulator microring resonator Mach-Zehnder interferometer tunability
