基于硅基铌酸锂薄膜（Lithium Niobate on insulator，LNOI）材料平台，设计并制备了高速电光开关芯片，并实现了芯片的光纤耦合、管壳封装和性能测试。测试结果表明，该高速电光开关器件的开关速度达到13.4 ns，消光比达到31.8 dB。研究工作对未来研制光学延时芯片和波束形成网络芯片具有重要的支撑意义。

微波光子收/发模块是微波光子系统中实现电光/光电转换等功能的核心部件，在雷达、电子对抗及通信等系统中均具有广泛应用。文章介绍了微波光子收/发模块结构原理和典型产品，论述了微波光子收/发模块未来发展趋势及关键技术。

针对硅光子集成回路缺少实用化光源的问题，提出了一种1.55 μm波段InP基FP激光器芯片、InP基PIN光电探测器芯片与硅光波导芯片集成模块的设计与制备方法。使用CMOS工艺兼容的硅光无源器件制备工艺，设计并制备了倒拉锥型端面耦合器，与锥形透镜光纤耦合效率为36.7 %。采用微组装对准技术将激光器芯片与硅波导芯片耦合、UV固化胶固化后耦合效率为35.8 %，1 dB耦合对准容差横向为1.2 μm，纵向为0.95 μm。

In this Letter, we reported the preliminary results of an integrating periodically capacitive-loaded traveling wave electrode (CL-TWE) Mach–Zehnder modulator (MZM) based on InP-based multiple quantum well (MQW) optical waveguides. The device configuration mainly includes an optical Mach–Zehnder interferometer, a direct current electrode, two phase electrodes, and a CL-TWE consisting of a U electrode and an I electrode. The modulator was fabricated on a 3 in. InP epitaxial wafer by standard photolithography, inductively coupled plasma dry etching, wet etching, electroplating, etc. Measurement results show that the MZM exhibits a 3 dB electro-optic bandwidth of about 31 GHz, a Vπ of 3 V, and an extinction ratio of about 20 dB.