Author Affiliations
Abstract
1 Würth Elektronik eiSos GmbH, Headquarters, Max-Eyth-Straße 1, Waldenburg 74638, Germany
2 Product Unit Capacitors & Resistors, Competence Center Berlin, Volmerstraße 10, Berlin 12489, Germany
This paper reviews the interpretation of impedance and capacitance spectra for different capacitor technologies and discusses how basic electrical characteristics can be inferred from them. The basis of the interpretation is the equivalent circuit for capacitors. It is demonstrated how the model parameters, such as capacitance and equivalent series resistance, can be extracted from the measured spectra. The aspects of measurement accuracy are exemplarily discussed on the measured spectra.
Impedance capacitance spectra capacitors equivalent circuit equivalent series resistance measurement accuracy Journal of Advanced Dielectrics
2023, 13(4): 2341010
Author Affiliations
Abstract
1 School of Chemistry & Chemical Engineering, Guangxi University, Nanning 530004, P. R. China
2 State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, P. R. China
Dielectric materials with high energy storage density () and efficiency () are expected for energy storage capacitors. In this work, 001-textured NbO3 (NBN) ceramics were prepared by a templated grain growth technique. The effects of microstructure and orientation degree on dielectric properties, polarization and energy storage performance were investigated. The textured ceramic with an optimized orientation degree (70%) showed a high of 2.4 J/cm3 and of 85.6%. The excellent energy storage properties of textured ceramic originate from the co-effect of interfacial polarization and clamping effect. The results indicate that texture development is a potential candidate to optimize the energy storage properties of functional ceramics.
NaNbO3 ceramics grain orientation energy storage density dielectric capacitors Journal of Advanced Dielectrics
2023, 13(4): 2341001
南京航空航天大学材料科学与技术学院，江苏省高效电化学储能技术重点实验室，南京 211106
锂离子电容器一个电极采用电池型负极，一个采用电容型正极，因而兼具高能量密度、高功率密度的优点，有望成下一代新型储能器件。基于Faraday反应的电池型电极与电容型电极动力学不匹配是锂离子电容器的一个巨大挑战，因此研究者们发展了多种倍率性锂离子电池材料。在这些材料中，钒基材料以其成本低、比容量大、倍率性能优异等优点被认为是锂离子电容器的理想负极材料。综述了包括Li3VO4、VN、Li3V2O5在内的多种不同类型钒基锂离子电池材料的储锂机理与性能优化的研究进展，并展望了锂离子电容器中钒基负极材料的发展方向。
锂离子电容器 负极 钒酸锂 氮化钒 锂钒氧化物 lithium-ion capacitors anode materials lithium vanadate vanadium nitride lithium vanadium oxide
1 内蒙古科技大学材料与冶金学院, 内蒙古自治区铁电新能源材料与器件重点实验室, 内蒙古 包头 014010
2 内蒙古科技大学化学与化工学院, 内蒙古 包头 014010
电介质储能材料被誉为“现代工业的血液”, 具有介电常数高、损耗低、功率密度大、充/放电速度快、可靠性好等优点, 是各类脉冲电力电子系统元器件的关键部件, 受到了科学界广泛的关注。但其储能密度低、效率差的缺点也极大地限制了多领域的应用。如何显著提高电介质材料的储能性能成为近年来功能陶瓷研究的热点之一。本工作对比了无机电介质储能材料的性能优势, 概述了电介质材料储能原理和储能特性的主要参数, 分析了线性电介质、弛豫铁电体、反铁电体等多种无机材料体系的组分设计思路和储能特性, 涵盖了陶瓷、膜及多层陶瓷电容器等多种材料形式, 并从材料组成、结构、制备工艺等多方面讨论了性能调控方法与增强机制, 最后分析了无机电介质储能材料所面临的机遇和挑战, 展望了其在未来的发展趋势。
电介质材料 电容器 储能特性 综述 dielectric materials capacitors energy storage performance review
广东微容电子科技有限公司,广东 深圳 518000
以混合酸作为腐蚀液, 腐蚀陶瓷介质层晶粒晶界, 再使用扫描电子显微镜进行微观结构观察。试验结果表明, 腐蚀液的种类、浓度、腐蚀时间及温度均对腐蚀效果影响较大。最终确定适宜的腐蚀条件为: 氢氟酸-硝酸体系,氢氟酸2 mL,硝酸5 mL,配置成100 mL溶液, Class 2(BaTiO3)陶瓷室温下腐蚀时间50 s, Class 1((Sr,Ca)(Zr,Ti)O3)陶瓷腐蚀15 s。
酸腐蚀 片式多层陶瓷电容器 晶界 微观结构 acid corrosion multi-layer ceramic capacitors ceramic grain microstructure
Author Affiliations
Abstract
1 Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
2 School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
3 Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
In recent years, significant progress has been achieved in the design and fabrication of stretchable optoelectronic devices. In general, stretchability has been achieved through geometrical modifications of device components, such as with serpentine interconnects or buckled substrates. However, the local stiffness of individual pixels and the limited pixel density of the array have impeded further advancements in stretchable optoelectronics. Therefore, intrinsically stretchable optoelectronics have been proposed as an alternative approach. Herein, we review the recent advances in soft electronic materials for application in intrinsically stretchable optoelectronic devices. First, we introduce various intrinsically stretchable electronic materials, comprised of electronic fillers, elastomers, and surfactants, and exemplify different intrinsically stretchable conducting and semiconducting composites. We also describe the processing methods used to fabricate the electrodes, interconnections, charge transport layers, and optically active layers used in intrinsically stretchable optoelectronic devices. Subsequently, we review representative examples of intrinsically stretchable optoelectronic devices, including light-emitting capacitors, light-emitting diodes, photodetectors, and photovoltaics. Finally, we briefly discuss intrinsically stretchable integrated optoelectronic systems.In recent years, significant progress has been achieved in the design and fabrication of stretchable optoelectronic devices. In general, stretchability has been achieved through geometrical modifications of device components, such as with serpentine interconnects or buckled substrates. However, the local stiffness of individual pixels and the limited pixel density of the array have impeded further advancements in stretchable optoelectronics. Therefore, intrinsically stretchable optoelectronics have been proposed as an alternative approach. Herein, we review the recent advances in soft electronic materials for application in intrinsically stretchable optoelectronic devices. First, we introduce various intrinsically stretchable electronic materials, comprised of electronic fillers, elastomers, and surfactants, and exemplify different intrinsically stretchable conducting and semiconducting composites. We also describe the processing methods used to fabricate the electrodes, interconnections, charge transport layers, and optically active layers used in intrinsically stretchable optoelectronic devices. Subsequently, we review representative examples of intrinsically stretchable optoelectronic devices, including light-emitting capacitors, light-emitting diodes, photodetectors, and photovoltaics. Finally, we briefly discuss intrinsically stretchable integrated optoelectronic systems.
stretchable optoelectronics light-emitting capacitors light-emitting diodes photodetectors photovoltaics intrinsically stretchable devices Opto-Electronic Advances
2022, 5(8): 210131
1 西安交通大学 信息与通信工程学院，陕西 西安 710049
2 中国电子科技集团 第十三研究所，河北 石家庄 050051
提出了一种基于片上集成电容工艺和带阻滤波结构的高功率三倍频器设计方法。在倍频器输入端，首先对倍频器二极管的直流偏置馈电部分进行改进，在梁式引线结构基础上结合二氧化硅（SiO2）工艺实现了片上集成电容，同时解决了三倍频器的直流馈电和射频接地问题，实现电路功能集成的同时也提高了模型仿真精度。此外，在二极管的输入端采用带阻滤波器结构替代传统的低通滤波结构，在保证倍频器性能的同时进一步简化倍频器结构复杂度和尺寸。为进行验证，设计并加工测试了两款中心频率分别为110 GHz和220 GHz的双路功率合成三倍频器。实际测试结果表明，在输入功率500 mW条件下，110 GHz三倍频器的输出峰值功率达到了140 mW，峰值效率接近30%，带宽超过15 GHz；在输入功率300 mW条件下，220 GHz三倍频器的输出峰值功率达到了45 mW，峰值效率达到15%，带宽为15 GHz。两款倍频的测试结果均有优秀表现，验证了设计方法的有效性。
倍频器 片上集成电容 带阻滤波器 波导匹配网络 tripler on-chip integrated capacitors bandstop filter waveguide matching network 强激光与粒子束
2020, 32(6): 065001
Author Affiliations
Abstract
State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, People’s Republic of China
The rapid progress of micro/nanoelectronic systems and miniaturized portable devices has tremendously increased the urgent demands for miniaturized and integrated power supplies. Miniaturized energy storage devices (MESDs), with their excellent properties and additional intelligent functions, are considered to be the preferable energy supplies for uninterrupted powering of microsystems. In this review, we aim to provide a comprehensive overview of the background, fundamentals, device configurations, manufacturing processes, and typical applications of MESDs, including their recent advances. Particular attention is paid to advanced device configurations, such as two-dimensional (2D) stacked, 2D planar interdigital, 2D arbitrary-shaped, three-dimensional planar, and wire-shaped structures, and their corresponding manufacturing strategies, such as printing, scribing, and masking techniques. Additionally, recent developments in MESDs, including microbatteries and microsupercapacitors, as well as microhybrid metal ion capacitors, are systematically summarized. A series of on-chip microsystems, created by integrating functional MESDs, are also highlighted. Finally, the remaining challenges and future research scope on MESDs are discussed.
microsystems miniaturized energy storage devices microbatteries microsupercapacitors microhybrid metal ion capacitors International Journal of Extreme Manufacturing
2020, 2(4): 042001
强激光与粒子束
2020, 32(7): 075003
