ZnGeP₂ (ZGP) crystals have attracted tremendous attention for their applications as frequency conversion devices. Nevertheless, the existence of native point defects, including at the surface and in the bulk, lowers their laser-induced damage threshold by increasing their absorption and forming starting points of the damage, limiting their applications. Here, native point defects in a ZGP crystal are fully studied by the combination of high angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and optical measurements. The atomic structures of the native point defects of the Zn vacancy, P vacancy, and Ge-Zn antisite were directly obtained through an HAADF-STEM, and proved by photoluminescence (PL) spectra at 77 K. The carrier dynamics of these defects are further studied by ultrafast pump-probe spectroscopy, and the decay lifetimes of 180.49, 346.73, and 322.82 ps are attributed to the donor V_p⁺ → valence band maximum (VBM) recombination, donor Ge_Zn⁺ → VBM recombination, and donor–acceptor pair recombination of V_p⁺ → V_Zn^-, respectively, which further confirms the assignment of the electron transitions. The diagrams for the energy bands and excited electron dynamics are established based on these ultrahigh spatial and temporal results. Our work is helpful for understanding the interaction mechanism between a ZGP crystal and ultrafast laser, doing good to the ZGP crystal growth and device fabrication.

近年来，国内外研究者们开展了一系列关于无机荧光粉中稀土离子和点缺陷发光性质的第一性原理研究。本文简要介绍作者与合作者们在该研究领域开展的工作与取得的结果。首先，简要介绍稀土发光材料第一性原理研究常用方法，主要包括：基于密度泛函理论和超单胞模型的点缺陷计算以及基于波函数多组态相互作用的激发态计算。然后，从点缺陷的热力学稳定性与发光机理研究以及稀土离子4f→5d跃迁模拟与激发光谱指认两个方面，详细阐述了第一性原理计算在Ce³⁺和Eu²⁺离子掺杂荧光粉中的具体应用。最后，对稀土发光材料的第一性原理计算研究领域的机遇和挑战进行了简要总结。

为配合6H-SiC中化学无序对其导电性能影响的研究, 本研究运用经典分子动力学方法, 采用LAMMPS软件对6H-SiC的线性级联碰撞过程进行了模拟, 给出了在不同能量、不同种类PKA(Primary Knock-on Atom)的情况下, 6H-SiC单次线性级联碰撞和多次线性级联碰撞过程中主要点缺陷的演化过程, 并统计了多次级联碰撞后化学无序的演化和六种点缺陷各自最终所占的比例。结果表明, 级联碰撞产生的Si-Si键比C-C键更易形成且更加稳定, Si-Si键主要由Si_C反位缺陷形成, C-C键主要由C间隙原子聚集形成, PKA的种类及初始能量影响点缺陷的产额和化学无序的程度, 但不影响六种点缺陷各自的占比。