Author Affiliations
Abstract
Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
As typical quarternary copper-based chalcogenides, Cu–Zn–Sn–S nanocrystals (CZTS NCs) have emerged as a new-fashioned electrocatalyst in hydrogen evolution reactions (HERs). Oleylamine (OM), a reducing surfactant and solvent, plays a significant role in the assisting synthesis of CZTS NCs due to the ligand effect. Herein, we adopted a facile one-pot colloidal method for achieving the structure evolution of CZTS NCs from 2D nanosheets to 1D nanorods assisted through the continuous addition of OM. During the process, the mechanism of OM-induced morphology evolution was further discussed. When merely adding pure 1-dodecanethiol (DDT) as the solvent, the CZTS nanosheets were obtained. As OM was gradually added to the reaction, the CZTS NCs began to grow along the sides of the nanosheets and gradually shrink at the top, followed by the formation of stable nanorods. In acidic electrolytic conditions, the CZTS NCs with 1.0 OM addition display the optimal HER activity with a low overpotential of 561 mV at 10 mA/cm2 and a small Tafel slope of 157.6 mV/dec compared with other CZTS samples. The enhancement of HER activity could be attributed to the contribution of the synergistic effect of the diverse crystal facets to the reaction.
2D nanosheets 1D nanorods structure evolution Cu−Zn−Sn−S electrocatalytic hydrogen evolution 
Journal of Semiconductors
2023, 44(12): 122701
涂自强 1,*何漩 1杜星 1陈辉 1[ ... ]王诚 2
作者单位
摘要
1 武汉科技大学耐火材料与冶金省部共建国家重点实验室, 武汉 430081
2 清华大学张家港氢能与先进锂电技术联合研究中心, 北京 100000
在质子交换膜燃料电池(PEMFC)运行过程中, 产生的自由基会攻击质子交换膜, 使其开裂或形成孔洞, 导致电池失效。常见的改性方法是在质子交换膜(PEM)中添加自由基清除剂材料。基于此, 本文合成了Sn掺杂CeO2自由基清除剂, 通过提高Ce3+浓度来增强其在PEMFC中自由基清除性能, 避免PEM厚度迅速减薄, 从而提高质子PEMFC的耐久性。密度泛函理论计算和试验结果表明, Sn掺杂会引起CeO2产生晶格畸变, 降低氧空位形成能, 促进CeO2中Ce3+的形成。同时, Sn2+的加入可将CeO2-Sn样品中的Ce4+还原为Ce3+, 提升Ce3+的浓度, 从而提高PEM的耐久性。单电池测试结果表明, 经70 h的开路电压衰减测试, CeO2-Sn-5%改性后的质子交换膜组装的单电池电压衰减率最低(18%), 且功率保留率(56%)比其他样品更高, 表明该样品具有更优异的耐久性。
Sn掺杂 密度泛函理论计算 氧空位 质子交换膜燃料电池 耐久性 CeO2 CeO2 Sn-doping density functional theory calculation oxygen vacancy PEMFC durability 
硅酸盐通报
2023, 42(5): 1841
作者单位
摘要
1 南京大学,固体微结构物理国家重点实验室&现代工程与应用科学学院,南京 210093
2 江苏省功能材料设计原理与应用技术重点实验室, 南京 210023
α-Sn(灰锡)是一种重要的拓扑材料, 据理论预测, 打破α-Sn的对称性可以得到拓扑绝缘体、拓扑半金属等多种拓扑相。目前α-Sn的研究以理论计算和角分辨光电子能谱研究能带结构为主, 受限于衬底条件, 高质量的α-Sn外延生长及其电输运性质的研究较少。本文结合课题组近几年在α-Sn薄膜外延生长和拓扑输运性质方面的研究进展, 系统地综述了高质量单晶α-Sn薄膜的分子束外延生长、电输运的测试方法及拓扑性质的验证。通过对输运性质的研究证实了α-Sn的狄拉克半金属相和自旋极化拓扑表面态, 进一步通过改变薄膜厚度和外加应力的方式来实现α-Sn拓扑性质的调控。以上工作不仅为进一步研究α-Sn的拓扑性质提供了重要依据, 也为基于α-Sn的新型量子器件研究提供了重要的材料基础。
拓扑材料 分子束外延 输运表征 狄拉克半金属 拓扑绝缘体 α-Sn α-Sn topological material molecular beam epitaxy transport measurement Dirac semimetal topological insulator 
人工晶体学报
2023, 52(6): 1025
Author Affiliations
Abstract
Engineering Research Center of Optical Instrument and System, Ministry of Education and Shanghai Key Laboratory of Modern Optical System, University of Shanghai for Science and Technology, Shanghai 200093, China
In this study, a batch of indium tin oxide (ITO)/Sn composites with different ratios was obtained based on the principle of thermal evaporation by an electron beam. The crystalline structure, surface shape, and optical characterization of the films were researched using an X-ray diffractometer, an atomic force microscope, a UV-Vis-NIR dual-beam spectrophotometer, and an open-hole Z-scan system. By varying the relative thickness ratio of the ITO/Sn bilayer film, tunable nonlinear optical properties were achieved. The nonlinear saturation absorption coefficient β maximum of the ITO/Sn composites is -10.5×10-7 cm/W, approximately 21 and 1.72 times more enhanced compared to monolayer ITO and Sn, respectively. Moreover, the improvement of the sample nonlinear performance was verified using finite-difference in temporal domain simulations.
ITO/Sn composite film Z-scan nonlinear absorption characteristic synergistic effect electric field enhancement 
Chinese Optics Letters
2023, 21(8): 081902
Author Affiliations
Abstract
Key Laboratory of Advanced Semiconductor Devices and Materials, School of Electronic Engineering, Xi’an University of Posts & Telecommunications, Xi’an 710121, China
Sn doping is an effective way to improve the response rate of Ga2O3 film based solar-blind detectors. In this paper, Sn-doped Ga2O3 films were prepared on a sapphire substrate by radio frequency magnetron sputtering. The films were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and ultraviolet visible spectroscopy, and the effect of annealing atmosphere on the properties of films was studied. The Ga2O3 films changed from amorphous to β-Ga2O3 after annealing at 900 °C. The films were composed of micro crystalline particles with a diameter of about 5–20 nm. The β-Ga2O3 had high transmittance for wavelengths above 300 nm, and obvious absorption for solar-blind signals at 200–280 nm. The metal semiconductor metal type solar-blind detectors were prepared. The detector based on Sn-doped β-Ga2O3 thin film annealed in N2 has the best response performance to 254 nm light. The photo-current is 10 μA at 20 V, the dark-current is 5.76 pA, the photo dark current ratio is 1.7 × 106, the response rate is 12.47 A/W, the external quantum efficiency is 6.09 × 103%, the specific detection rate is 2.61 × 1012 Jones, the response time and recovery time are 378 and 90 ms, respectively.
Sn doped Ga2O3 RF magnetron sputtering solar-blind photodetector 
Journal of Semiconductors
2023, 44(6): 062805
作者单位
摘要
1 西安交通大学 西安 710049
2 中国核动力研究设计院 成都 610041
随着反应堆堆芯设计的复杂化,给堆芯物理的建模计算带来了一定的挑战。针对复杂几何堆芯的精细建模计算,采用基于任意三棱柱网格的离散纵标节块法,通过构造实体几何的方式,实现了复杂非结构几何堆芯的准确建模以及非结构网格的生成,同时由于非结构网格计算量大,采用了块雅各比的并行算法以减少堆芯输运计算时间。将SARAX程序用于空间反应堆和热管堆的计算中,特征值和堆芯径向功率分布结果与多群蒙特卡罗的计算结果吻合良好,特征值的计算偏差小于3.00×10-3,径向功率分布的相对偏差小于1.5%,表明SARAX程序在复杂非结构几何堆芯计算中具有较高的精度。
非结构堆芯 离散纵标节块法 网格生成 并行算法 程序验证 Unstructured core SN nodal method Mesh generation Parallel algorithm Code verification 
核技术
2023, 46(6): 060603
作者单位
摘要
1 1. 济南大学 材料科学与工程学院, 济南 250022
2 2. 惠州学院 广东省电子功能材料与器件重点实验室, 惠州 516001
钙锆共掺钛酸钡陶瓷(BCZT)具有优异的介电性能和压电性能, 是一类具有发展潜力的无铅压电陶瓷, 但其压电性能仍无法与铅基陶瓷媲美。为提高压电性能, 本研究对陶瓷材料进行Sn元素掺杂改性((Ba0.85Ca0.15)- (Ti0.9Zr0.1-xSnx)O3, x=0.02~0.07))。晶体结构分析证实所有组分的陶瓷无杂相, 处于正交相与四方相两相共存状态, 并具有较大的c/a; 显微结构分析发现所有陶瓷都很致密, 且平均晶粒尺寸随着Sn含量的增加而增大。当x=0.04时, 陶瓷最致密, 且室温处于准同型相界附近, 因此拥有最佳的电学性能: d33=590 pC•N -1, kp=52.2%, tanδ=0.016, ε T33=5372, d *33=734 pm•V -1, IR=57.8 GΩ•cm。本研究表明: Sn掺杂的BCZT基无铅压电陶瓷具有优异的压电性能, 有望在换能器、机电传感器和驱动器等方面得到应用。
(BaCa)(TiZr)O3基无铅压电陶瓷 Sn掺杂 准同型相界 晶粒尺寸效应 (BaCa)(TiZr)O3 based lead-free piezoceramics Sn doping morphotropic phase boundary grain size effect 
无机材料学报
2022, 37(5): 513
作者单位
摘要
1 泉州师范学院物理与信息工程学院 福建省先进微纳光子技术与器件重点实验室,福建 泉州 362000
2 泉州师范学院 化工与材料学院,福建 泉州 362000
制备了平面结构2D/3D混合钙钛矿(PEA)0.15FA0.85SnI3/SnO2异质结光探测器。研究发现,SnO2薄膜的引入可以调控(PEA)0.15FA0.85SnI3薄膜的晶体生长过程,有助于获得致密的连续薄膜。在520 nm单色光辐照下,器件的响应度高达3.19×105 A/W,相应的探测率为6.39×1015 Jones。在808 nm单色光辐照下,器件的响应度和探测器率也可分别达到1.70×104 A/W和7.28×1013 Jones。相关性能明显高于(PEA)0.15FA0.85SnI3单层薄膜光探测器。器件性能的提高一方面是由于钙钛矿薄膜表面形貌的改善,提高了器件的吸收效率和载流子收集效率;另一方面是由于(PEA)0.15FA0.85SnI3和SnO2之间形成了p?n结结构,从而有效提高了钙钛矿薄膜中的光生电子?空穴对的分离效率,降低了电子和空穴的复合几率。同时,(PEA)0.15FA0.85SnI3/SnO2界面处特殊的能级结构也可诱导器件产生光电导增益。
光探测器 Sn基钙钛矿 异质结 2D/3D混合结构 SnO2 photodetector Sn perovskite heterojunction 2D/3D hybrid structure SnO2 
发光学报
2022, 43(7): 1121
作者单位
摘要
锡基材料在自然界含量丰富、价格低廉, 在电催化还原CO2制液体燃料反应中具有巨大潜力。但是较低的产物选择性和较差的稳定性限制了其应用。本工作制备的锡量子点电催化剂(Sn-QDs), 具有高效、高稳定性和高选择性的电催化还原CO2产HCOOH活性。Sn-QDs的平均颗粒尺寸仅为2~3 nm, 结晶性良好。小的颗粒尺寸增大了电化学活性面积(ECSA), Sn-QDs的ECSA约为锡颗粒的4.4倍。ECSA增大以及CO2还原反应动力学加速, 促进了CO2电化学转化。在-1.0 V (vs RHE)下, Sn-QDs/CN催化剂的HCOOH法拉第效率(FEHCOOH)达到95%, 并且在宽约0.5 V的电势范围内能够保持在83%以上。此外, Sn-QDs/CN可以在24 h内保持良好的电化学稳定性。
CO2还原 锡量子点 HCOOH 电催化剂 CO2 reduction Sn quantum dots HCOOH electrocatalyst 
无机材料学报
2021, 36(12): 1337
曾凡菊 1,2,*谭永前 2张小梅 2尹海峰 2[ ... ]唐孝生 1,**
作者单位
摘要
1 重庆大学光电工程学院, 重庆 400044
2 凯里学院大数据工程学院, 贵州 凯里 556011
采用热注入法合成了锡掺杂CsPbBr3量子点。透射电子显微镜和X射线衍射仪(XRD)的表征结果显示,少量锡掺杂可以部分替代铅,对量子点有钝化作用,减少了量子点的表面缺陷,提高了量子点的光致发光量子效率(PLQY)。当掺杂铅和锡的物质的量比为9∶1时,量子点的PLQY从未掺杂时的21.0%提高到了40.4%。随着锡掺杂量的增加,XRD谱中出现了杂相,光致发光减弱,PLQY由少量锡掺杂(铅和锡的物质的量比为9∶1)量子点的40.4%降低到CsPb0.6Sn0.4Br3的10.4%。少量锡掺杂的CsPb0.9Sn0.1Br3具有最强的光致发光和电致发光,其光致发光峰位为511 nm,PLQY为40.4%,电致发光峰位为512 nm,电致发光亮度为343.0 cd/m 2,是未掺杂CsPbBr3量子点发光二极管亮度的2.5倍。本实验证明了采用少量锡掺杂CsPbBr3(CsPb0.9Sn0.1Br3)可以降低量子点的表面缺陷,提高量子点的光致发光与电致发光性能。
材料 锡掺杂CsPbBr3量子点 晶体结构 光致发光 电致发光 
光学学报
2021, 41(4): 0416001

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