作者单位
摘要
1 上海大学 理学院 物理系,上海 200444
2 中国科学院上海技术物理研究所 红外物理国家重点实验室,上海 200083
本工作应用截面扫描隧道显微镜(XSTM)研究了分子束外延生长的Hg0.72Cd0.28Te薄膜。扫描隧道谱(STS)测量显示,此碲镉汞材料的电流-电压(I/V)隧道谱呈现的零电流平台宽度(隧道谱表观带隙)比其实际材料带隙增大约130%,说明存在明显的针尖诱导能带弯曲(TIBB)效应。应用扫描隧道谱三维TIBB模型计算发现低成像偏压测量时获取的I/V隧道谱数据与理论计算结果有令人满意的一致性。然而较大成像偏压时所计算的I/V谱与实验谱线在较大正偏压区域存在一定偏离。这是由于目前的TIBB模型未考虑带带隧穿,缺陷辅助隧穿等碲镉汞本身的输运机制对隧道电流的影响造成的。
扫描隧道显微镜 扫描隧道谱 HgCdTe 针尖诱导能带弯曲 scanning tunneling microscopy scanning tunneling spectroscopy HgCdTe tip-induced band bending 
红外与毫米波学报
2024, 43(3): 300
作者单位
摘要
1 东南大学 毫米波全国重点实验室,江苏 南京 210096
2 紫金山实验室,江苏 南京 211111
本文基于0.1-μm砷化镓赝配高电子迁移率晶体管(GaAs pHEMT)工艺,研制了一款覆盖整个W波段的宽带低噪声放大器。提出了一种由双并联电容组成的旁路电路,能够提供宽带射频接地,减小了级间串扰,利于实现宽带匹配。采用双谐振匹配网络实现了宽带的输入匹配和最佳噪声匹配。实测结果显示,最大增益在108 GHz处达到20.4 dB,在66~112.5 GHz范围内,小信号增益为16.9~20.4 dB。在90 GHz处,实测噪声系数为3.9 dB。实测的输入1-dB压缩点在整个W波段内约为-12 dBm。
砷化镓赝配高电子迁移率晶体管 低噪声放大器 宽带 W波段 GaAs pHEMT low noise amplifier (LNA) wide band W-band 
红外与毫米波学报
2024, 43(2): 187
Author Affiliations
Abstract
1 Nanjing University of Information Science & Technology, Nanjing 210044, China
2 Key Laboratory for Information Science of Electromagnetic Waves (MoE), Fudan University, Shanghai 200433, China
We propose a neural network equalization delta-sigma modulation (DSM) technique. After performing DSM on the multi-order quadrature amplitude modulation (QAM) orthogonal frequency division multiplexing (OFDM) signal at the transmitting end, neural network equalizer technology is used in the digital signal processing at receiving end. Applying this technology to a 4.6 km W-band millimeter wave system, it is possible to achieve a 1 Gbaud 8192-QAM OFDM signal transmission. The data rate reached 23.4 Gbit/s with the bit error rate at 3.8 × 10-2, lower than soft-decision forward-error correction threshold (4 × 10-2).
multi-order quadrature amplitude modulation W-band delta-sigma modulation neural network equalization nonlinear compensation 
Chinese Optics Letters
2024, 22(4): 040601
Yong Sun 1,2,*Wei Zhang 1,2Shuang Han 1,2Ran An 1,2[ ... ]Jing-Lin Xiao 1,2
Author Affiliations
Abstract
1 Institute of Condensed Matter Physics, Inner Mongolia Minzu University, Tongliao 028043, China
2 College of Physics and Electronic Information, Inner Mongolia Minzu University, Tongliao 028043, China
Excitons have significant impacts on the properties of semiconductors. They exhibit significantly different properties when a direct semiconductor turns in to an indirect one by doping. Huybrecht variational method is also found to influence the study of exciton ground state energy and ground state binding energy in AlxGa1?xAs semiconductor spherical quantum dots. The AlxGa1?xAs is considered to be a direct semiconductor at Al concentration below 0.45, and an indirect one at the concentration above 0.45. With regards to the former, the ground state binding energy increases and decreases with Al concentration and eigenfrequency, respectively; however, while the ground state energy increases with Al concentration, it is marginally influenced by eigenfrequency. On the other hand, considering the latter, while the ground state binding energy increases with Al concentration, it decreases with eigenfrequency; nevertheless, the ground state energy increases both with Al concentration and eigenfrequency. Hence, for the better practical performance of the semiconductors, the properties of the excitons are suggested to vary by adjusting Al concentration and eigenfrequency
exciton effects aluminum gallium arsenide crystal direct band gap semiconductor indirect band gap semiconductor 
Journal of Semiconductors
2024, 45(3): 032701
Author Affiliations
Abstract
1 Saint-Petersburg Electrotechnical University "LETI", Saint Petersburg, 197022, Russian Federation
2 Alferov Saint-Petersburg National Research Academic University of the Russian Academy of Sciences, Saint Petersburg, 194021, Russian Federation
3 Saint Petersburg Polytechnic University of Peter the Great, Saint Petersburg, 195251, Russian Federation
4 Shubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics”, Russian Academy of Sciences, Moscow, 119333, Russian Federation
5 National Research Center ‘Kurchatov Institute’, Moscow, 123182, Russian Federation
6 University associated with IA EAEC, Saint Petersburg, 194044, Russian Federation
7 Institute for Analytical Instrumentation, Saint Petersburg, 198095, Russian Federation
8 Ioffe Institute, Saint Petersburg, 194021, Russian Federation
A new theoretical method to study super-multiperiod superlattices has been developed. The method combines the precision of the 8-band kp-method with the flexibility of the shooting method and the Monte Carlo approach. This method was applied to examine the finest quality samples of super-multiperiod Al0.3Ga0.7As/GaAs superlattices grown by molecular beam epitaxy. The express photoreflectance spectroscopy method was utilized to validate the proposed theoretical method. For the first time, the accurate theoretical analysis of the energy band diagram of super-multiperiod superlattices with experimental verification has been conducted. The proposed approach highly accurately determines transition peak positions and enables the calculation of the energy band diagram, transition energies, relaxation rates, and gain estimation. It has achieved a remarkably low 5% error compared to the commonly used method, which typically results in a 25% error, and allowed to recover the superlattice parameters. The retrieved intrinsic parameters of the samples aligned with XRD data and growth parameters. The proposed method also accurately predicted the escape of the second energy level for quantum well thicknesses less than 5 nm, as was observed in photoreflectance experiments. The new designs of THz light-emitting devices operating at room temperature were suggested by the developed method.
super-multiperiod superlattice photoreflectance spectroscopy Kane model kp-method energy band diagram light amplifiers 
Journal of Semiconductors
2024, 45(2): 022701
Author Affiliations
Abstract
1 Key Laboratory of EMW Information (MoE), Fudan University, Shanghai 200433, China
2 Shanghai ERC of LEO Satellite Communication and Applications, Shanghai CIC of LEO Satellite Communication Technology, Shanghai 200433, China
3 Science and Technology on Electromagnetic Compatibility Laboratory, China Ship Development and Design Centre, Wuhan 430000, China
4 Peng Cheng Laboratory, Shenzhen 518055, China
This paper experimentally demonstrates a distributed photonics-based W-band integrated sensing and communication (ISAC) system, in which radar sensing can aid the communication links in alignment and data rate estimation. As a proof-of-concept, the ISAC system locates the users, guides the alignment, and sets a communication link with the estimated highest data rate. A peak net data rate of 68.6 Gbit/s and a target sensing with a less-than-1-cm error and a sub-2-cm resolution have been tested over a 10-km fiber and a 1.15-m free space transmission in the photonics-based W-band ISAC system. The achievable net data rates of the users at different locations estimated by sensing are experimentally verified.
integrated sensing and communication photonics-aided technique W-band radar-aided flexible communication 
Chinese Optics Letters
2024, 22(4): 043901
作者单位
摘要
1 中国科学院光电技术研究所, 四川 成都 610209
2 中国科学院光场调控科学技术全国重点实验室, 四川 成都 610209
针对现有多波段成像系统体积大、功耗高和集成化设计困难的问题,本文提出了一种基于单传感器的三波段共口径成像光学系统的设计方法。首先,在光学系统的光阑处设计1×2多波段透镜阵列,把可见光波段和短波红外波段同时成像在一个像平面上,并把两个波段中心波长的成像位置偏差控制在一个像元内以实现双波段融合成像。然后,针对双波段成像衍射极限不同的问题,提出分通道透镜阵列的离轴偏移量和通光口径大小联合优化方法,并采用双电动光阑高速控制三个成像通道的切换速度。最后,设计了一个基于单传感器的焦距为30 mm,工作波段分别为480~900 nm、900~1700 nm和480~1700 nm的三波段共口径光学系统。设计及分析结果表明该系统具有成像质量好、结构紧凑、无运动光学元件、成像波段切换速度快等优点。
单传感器 透镜阵列 多波段成像系统 光学设计 single sensor lens array multi-band imaging system optical design 
中国光学
2024, 17(2): 382
作者单位
摘要
吉林大学 电子科学与工程学院, 集成光电子学国家重点实验室, 吉林 长春  130012
光学频率梳(简称光频梳)作为一种优秀的多波长光源在通信领域具有巨大的应用潜力。通过将光频梳光源与波分复用技术(WDM)、空分复用技术结合(SDM),通信系统可以具有百Tbit/s量级的传输速率,在5G/6G通信、物联网、自动驾驶等方面具有重要的应用价值。目前实现光频梳的方法主要有以下四种,分别为基于锁模激光器产生飞秒光频梳、基于光学微腔产生光频梳、基于电光调制器产生光频梳以及基于行波四波混频产生光频梳。它们各具特点,但均很难同时实现宽光谱、高信噪比、高平坦度、高的单梳齿功率以及梳齿频率间隔大范围可调,这在一定程度上影响了光频梳在光通信领域的应用。本文提出基于受激布里渊激光腔产生种子梳,采用腔外负色散光纤进行脉冲压缩,进一步利用色散调控的高非线性氟碲酸盐光纤进行扩谱,从而实现光频梳产生。数值计算结果表明,通过该系统,我们可以得到重复频率大范围可调、光谱覆盖整个O-U波段且在O-U波段梳齿强度标准差小于5 dB的平坦光频梳,证明了通过基于布里渊激光腔与色散调控高非线性氟碲酸盐光纤的光学系统产生可用于光通信的平坦光频梳的可行性。
光频梳 色散调控氟碲酸盐玻璃光纤 脉冲压缩 腔外扩谱 O-U波段平坦 optical frequency comb dispersion-controlled fluorotellurite glass fiber pulse compression spectral broadening out of cavity O-U band flat 
发光学报
2024, 45(3): 458
作者单位
摘要
上海大学 特种光纤与光接入网重点实验室,上海 200444
【目的】

具有可调谐能力的高频微波载波(GHz)在第五代移动通信技术(5G)/第六代移动通信技术(6G)无线网络、雷达系统和卫星通信领域中有着广泛的应用。由于比较简单的系统结构、大带宽和低损耗的优点,基于光子技术生成高频可调谐微波载波的技术方案吸引了国内外研究团队的广泛关注。由于目前C波段有着成熟的商用器件,因此目前光生微波实验多在C波段进行。随着波分复用(WDM)—光载射频(ROF)技术借助WDM系统在光频域的合/分波来灵活实现微波频段的合/分波,利用ROF系统采用光生微波技术来简化基站配置,使得C波段的有限带宽资源(35 nm,1 530~1 565 nm)越来越紧张。因此,光生微波技术的研究有着向更宽光谱范围扩展的驱动力。U波段可以提供宽至50 nm(1 625~1 675 nm)的信道带宽来缓解C波段的信道利用压力。在U波段,标准单模光纤已实现低至0.195 dB/km(@1 625 nm)的光功率损耗,特别是,掺铥光纤放大器在U波段也可实现达到18.7 dB(@1 655 nm)的大带宽增益。因此,基于标准单模光纤的WDM系统可向U波段扩展,从而促使WDM-ROF技术向这一波段延伸,进而带动光生微波技术向U波段拓展。文章研究了U波段的光生微波技术。

【方法】

从数学模型上看,现有光生微波技术对所应用的光载波波段是透明的,只需选择对应工作波段的光子学器件就可在任意波段使用这些方法来产生微波载波。从原理上看,C波段的光子学器件(如偏振控制器、相位调制器(PM)和光纤移相器(FPS)等)可以工作在U波段,这些器件的工艺技术成熟并易于购置。因此,文章采用C波段的PM、FPS和光耦合器等光子学器件,基于U波段光载波搭建了光生微波载波系统。

【结果】

最终基于该系统产生了调谐范围覆盖7.5~12.0 GHz、杂散抑制比达29.6~35.2 dB的可调谐微波载波。

【结论】

文章通过公式原理分析和实验验证,实现了将光生微波载波技术的工作波段扩展至U波段。

光生微波载波 U波段 光相位调制器 强度调制 频率可调谐 杂散抑制比 photogenerated microwave carrier U-band optical PM intensity modulation frequency-tunable spurious suppression ratio 
光通信研究
2024, 50(2): 22005401
作者单位
摘要
复旦大学通信科学与工程系和电磁波信息科学教育部重点实验室,上海 200433
提出了一种基于光学外调制器倍频产生W波段线性调频(LFM)信号并用于高分辨率测距的新方案。通过光调制器将来自任意波形发生器(AWG)的LFM信号调制到光载波的边带上,利用光电探测器(PD)拍频完成光电转换,从而产生四倍频W波段LFM信号,其中心频率与带宽均为原始LFM信号的四倍。发射上述宽带LFM信号对相距为50 cm的2个目标分别测距,测量结果为48.8 cm,误差为1.2 cm。为进一步验证实验的可靠性,调整2个目标的距离为40 cm,测量结果为38.9 cm,误差为1.1 cm。该系统克服了难以直接在电域产生高频信号的“电子瓶颈”,通过光子辅助产生宽带LFM信号实现了高分辨率感知测距,为未来超高分辨率的线性调频连续波雷达系统提供了一种解决方案。
微波光子学 雷达测距 光子辅助倍频 线性调频连续波 W波段 
激光与光电子学进展
2024, 61(9): 0906006

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