Spinel ferrite Ni0.08Mn0.90Zn0.02Fe₂O₄ was prepared by a conventional ceramic process followed by sintering at three different temperatures (1050∘ C, 1100∘ C and 1150∘ C). X-ray diffraction (XRD) investigations stated the single-phase cubic spinel structure and the FTIR spectra revealed two prominent bands within the wavenumber region from 600 cm−1 to 400 cm−1. Surface morphology showed highly crystalline grain development with sizes ranging from 0.27 μm to 0.88 μm. The magnetic hysteresis curve at ambient temperature revealed a significant effect of sintering temperature on both coercivity (Hc) and saturation magnetization (Ms). Temperature caused a decrease in DC electrical resistivity, while the electron transport increased, suggesting the semiconducting nature of all samples and that they well followed the Arrhenius law from which their activation energies were determined. The values of Curie temperature (Tc) and activation energy were influenced by the sintering temperature. Frequency-dependent dielectric behavior (100 Hz–1 MHz) was also analyzed, which may be interpreted by the Maxwell–Wagner-type polarization. The UV–vis–NIR reflectance curve was analyzed to calculate the bandgap of ferrites, which showed a decreasing trend with increasing sintering temperature.Spinel ferrite Ni0.08Mn0.90Zn0.02Fe₂O₄ was prepared by a conventional ceramic process followed by sintering at three different temperatures (1050∘ C, 1100∘ C and 1150∘ C). X-ray diffraction (XRD) investigations stated the single-phase cubic spinel structure and the FTIR spectra revealed two prominent bands within the wavenumber region from 600 cm−1 to 400 cm−1. Surface morphology showed highly crystalline grain development with sizes ranging from 0.27 μm to 0.88 μm. The magnetic hysteresis curve at ambient temperature revealed a significant effect of sintering temperature on both coercivity (Hc) and saturation magnetization (Ms). Temperature caused a decrease in DC electrical resistivity, while the electron transport increased, suggesting the semiconducting nature of all samples and that they well followed the Arrhenius law from which their activation energies were determined. The values of Curie temperature (Tc) and activation energy were influenced by the sintering temperature. Frequency-dependent dielectric behavior (100 Hz–1 MHz) was also analyzed, which may be interpreted by the Maxwell–Wagner-type polarization. The UV–vis–NIR reflectance curve was analyzed to calculate the bandgap of ferrites, which showed a decreasing trend with increasing sintering temperature.

采用显微动态散斑相关法来测量压电陶瓷的压电位移特性并标定其线性区间。推导了透射相位衍射体在显微系统中的散斑光强互相关函数，并讨论了显微系统分辨率与放大倍率对测量微位移的影响。为在计算中避免散斑去相关的影响，采用了逐级位移相关叠加法。设计了显微散斑采集系统并测量了压电陶瓷的位移磁滞曲线。实验结果表明：使用放大倍率为100、数值孔径为1.25的显微物镜，在测量光路放大倍率为42.1时，测量位移的理论精度达到0.082；考虑衍射极限时，实际的极限位移分辨率为0.348 μm。本测量系统满足压电陶瓷位移曲线测量及线性区间标定的要求；与其他方法相比较，该方法简化了测量光路，提高了运算速度，且对装配误差要求低。

为了模拟WTYD型压电陶瓷微位移器的输出位移与驱动电压之间的迟滞曲线，通过采用Bouc-Wen模型模拟迟滞分量，提出了一种表征WTYD型压电陶瓷微位移器的输出位移与驱动电压之间迟滞关系的Bouc-Wen模型并建立了相应的参数辨识方法。为了验证Bouc-Wen模型及其相应的参数辨识方法的有效性，建立了相应的实验装置并对模型进行了实验验证。研究结果表明，Bouc-Wen模型的最大绝对误差为3.78 μm，最大相对误差为5.79%，表明Bouc-Wen模型及相应的参数辨识方法能较好地模拟WTYD型压电陶瓷微位移器的迟滞特性。