Modern scintillator-based radiation detectors require silicon photomultipliers (SiPMs) with photon detection efficiency higher than 40% at 420 nm, possibly extended to the vacuum ultraviolet (VUV) region, single-photon time resolution (SPTR) < 100 ps, and dark count rate (DCR) < 150 kcps/mm². To enable single-photon time stamping, digital electronics and sensitive microcells need to be integrated in the same CMOS substrate, with a readout frame rate higher than 5 MHz for arrays extending over a total area up to 4 mm × 4 mm. This is challenging due to the increasing doping concentrations at low CMOS scales, deep-level carrier generation in shallow trench isolation fabrication, and power consumption, among others. The advances at 350 and 110 nm CMOS nodes are benchmarked against available SiPMs obtained in CMOS and commercial customized technologies. The concept of digital multithreshold SiPMs with a single microcell readout is finally reported, proposing a possible direction toward fully digital scintillator-based radiation detectors.

新一代高超声速飞行器热端部件服役温度不断提高, 对表面防护涂层的相稳定性和抗烧蚀性能提出了更高的要求。本工作针对传统过渡金属氧化物ZrO₂、HfO₂涂层开展高熵化设计, 采用高温固相反应结合超音速大气等离子喷涂制备(Hf_0.125Zr_0.125Sm_0.25Er_0.25Y_0.25)O_2-δ(M1R3O)、(Hf_0.2Zr_0.2Sm_0.2Er_0.2Y_0.2)O_2-δ(M2R3O)、(Hf_0.25Zr_0.25- Sm_0.167Er_0.167Y_0.167)O_2-δ(M3R3O)三种高熵氧化物涂层, 探究稀土组元含量对高熵氧化物涂层的相结构演变规律、相稳定性以及抗烧蚀性能的影响。M2R3O涂层和M3R3O涂层呈现优异的相稳定性和抗烧蚀性能, 涂层经热流密度为2.38~2.40 MW/m²的氧-乙炔焰烧蚀后仍保持物相结构稳定, 未发生固溶体分解或析出稀土组元。其中M2R3O涂层循环烧蚀180 s后的质量烧蚀率与线烧蚀率分别为0.01 mg/s和-1.16 μm/s, 相比M1R3O涂层(0.09 mg/s、-1.34 μm/s)以及M3R3O涂层(0.02 mg/s、-4.51 μm/s), 分别降低了88.9%、13.4%以及50.0%、74.3%, 表现出最优异的抗烧蚀性能。M2R3O涂层的抗烧蚀性能优异归因于其兼具较高的熔点(>2200 ℃)和较低的热导率((1.07±0.09) W/(m·K)), 使其有效防护内部的SiC过渡层以及C/C复合材料免受氧化损伤, 避免了界面SiO₂相形成所导致的界面开裂。

Artificial synapses utilizing spike signals are essential elements of new generation brain-inspired computers. In this paper, we realize light-stimulated adaptive artificial synapse based on nanocrystalline zinc oxide film. The artificial synapse photoconductivity shows spike-type signal response, long and short-term memory (LTM and STM), STM-to-LTM transition and paired-pulse facilitation. It is also retaining the memory of previous exposures and demonstrates spike-frequency adaptation properties. A way to implement neurons with synaptic depression, tonic excitation, and delayed accelerating types of response under the influence of repetitive light signals is discussed. The developed artificial synapse is able to become a key element of neuromorphic chips and neuromorphic sensorics systems.

Here we review two 300 °C metal–oxide (MO) thin-film transistor (TFT) technologies for the implementation of flexible electronic circuits and systems. Fluorination-enhanced TFTs for suppressing the variation and shift of turn-on voltage (V_ON), and dual-gate TFTs for acquiring sensor signals and modulating V_ON have been deployed to improve the robustness and performance of the systems in which they are deployed. Digital circuit building blocks based on fluorinated TFTs have been designed, fabricated, and characterized, which demonstrate the utility of the proposed low-temperature TFT technologies for implementing flexible electronic systems. The construction and characterization of an analog front-end system for the acquisition of bio-potential signals and an active-matrix sensor array for the acquisition of tactile images have been reported recently.

忆阻器可以在单一器件上实现存储和计算功能, 成为打破冯·诺依曼瓶颈的核心电子元器件之一。它凭借独特的易失性/非易失性电阻特性, 可以很好地模拟大脑活动中的突触/神经元的功能。此外, 基于金属氧化物的忆阻器与传统的互补金属氧化物半导体(CMOS)工艺兼容, 受到了广泛关注。近年来, 研究提出了多种基于单介质层结构的金属氧化物忆阻器, 但仍然存在高低阻态不稳定、开关电压波动大和循环耐久性差等问题。在此基础上, 研究人员通过在金属氧化物忆阻器中引入双介质层成功优化了忆阻器的性能。本文首先详细介绍了氧化物双介质层忆阻器的优势, 阐述了氧化物双介质层忆阻器的阻变机理和设计思路, 并进一步介绍了氧化物双介质层忆阻器在神经形态计算中的应用。本文将为设计更高性能的氧化物双介质层忆阻器起到一定的启示作用。

光谱烧孔型全息存储因高密度、抗干扰、低能耗的特点而具备了海量“冷数据”存储潜力。本文结合作者的科研经历，首先简要回顾了光谱烧孔的发展历程和存在瓶颈；随后基于等离激元光谱烧孔的基本原理，阐述了过渡金属氧化物/贵金属功能基元室温全息光谱烧孔的新思想；继而展示了作者在大面积全息盘片研制和小型化全息存储器开发方面的最新成果；最后对未来利用功能基元空间序构实现高密度频域全息光谱烧孔进行了展望。作者所在团队的系列工作开辟了高密度光存储的新方向，同时为发展过渡金属氧化物基高集成光电器件提供了有益的思路。