Author Affiliations
Abstract
1 Department of ECE, National Institute of Technology Uttarakhand, Srinagar, Garhwal 246174, India
2 Department of ECE, Institute of Engineering and Rural Technology, Allahabad, Prayagraj, Uttar Pradesh 211002, India
3 Department of ECE, Motilal Nehru National Institute of Technology Allahabad, Prayagraj, Uttar Pradesh 211004, India
4 Department of ECE, Netaji Subhas University of Technology (NSUT), New Delhi 110078, India
This work presents a surface plasmon resonance biosensor for the figure of merit enhancement by using Ga-doped zinc oxide (GZO), i.e., nanostructured transparent conducting oxide as plasmonic material in place of metal at the telecommunication wavelength. Two-dimentional graphene is used here as a biorecognition element (BRE) layer for stable and robust adsorption of biomolecules. This is possible due to stronger van der Waals forces between graphene’s hexagonal cells and carbon-like ring arrangement present in biomolecules. The proposed sensor shows improved biosensing due to fascinating electronic, optical, physical, and chemical properties of graphene. This work analyses the sensitivity, detection accuracy, and figure of merit for the GZO/graphene SPR sensor on using the dielectric layer in between the prism and GZO. The highest figure of merit of 366.7 RIU-1 is achieved for the proposed SPR biosensor on using the nanostructured GZO at the 3000 nm dielectric thickness. The proposed SPR biosensor can be used practically for sensing of larger size biomolecules with due availability of advanced techniques for the fabrication of the nanostructured GZO and graphene.
SPR transparent conducting oxide Ga-doped zinc oxide sensitivity (S) detection accuracy figure of merit Photonic Sensors
2020, 10(4): 340
透明导电氧化物薄膜在光伏器件、平面显示器件中有着广泛的应用, 其介电函数是薄膜材料器件化过程中不可忽略的基本物理参数。使用脉冲激光沉积技术, 在(LaAlO3)0.3(Sr2AlTaO6)0.35(LSAT)基底上成功制备了La2/3Sr1/3VO3(LSVO)薄膜, 并运用光谱椭偏仪测量了LSVO薄膜的椭偏光谱。先后用B样条模型和Lorentz+Tauc-Lorentz联合色散模型描述了材料的介电函数, 并首次具体给出了LSVO薄膜的介电函数。结果表明, LSVO薄膜在1.24~5.06 eV光谱范围内存在3.41 eV和4.11 eV两个明显的光学跃迁, 其中3.41 eV的跃迁峰为材料的光学带隙, 与未掺杂的LaVO3材料相比, 有着0.19 eV的红移; 高能区域的4.11 eV的跃迁峰则源自于O 2p轨道和空置的V 4s轨道之间的电荷转移态激发跃迁。
薄膜 透明导电氧化物 B样条 介电函数 thin films transparent conducting oxide B-spline dielectric function
主要对目前国际上研究较多的几种透明导电薄膜，如金属膜、透明导电氧化物(TCO)薄膜(In2O3基、SnO2基、ZnO基及TiO2基薄膜)、p型材料及多层膜的性能、制备工艺、研究现状及最新进展进行了较为详细的阐述。介绍了一些较为特殊的透明导电薄膜材料。展望了透明导电薄膜未来的研究方向及发展前景。
薄膜 透明导电薄膜 金属膜 透明导电氧化物薄膜 多层膜 激光与光电子学进展
2012, 49(10): 100003
1 中国科学院 激发态物理重点实验室 长春光学精密机械与物理研究所, 吉林 长春130033
2 中国科学院 研究生院, 北京100039
采用离子辅助的电子束双源共蒸技术制备了AZO薄膜, 其载流子浓度和迁移率分别为4.39×1020 cm-3和15 cm2·V-1·s-1, 在可见光范围内的平均透过率达到85.5%, 功函数为5.05 eV。采用AZO作为阳极制备的磷光OLED得到最大亮度为192 400 cd/m2, 最大电流效率为83.5 cd/A。结果表明, AZO作为OLED的阳极可获得优异的电致发光性能。
透明导电薄膜 磷光 有机电致发光 transparent conducting oxide AZO AZO phosphorescent organic light-emitting device
1 中国科学院长春光学精密机械与物理研究所激发态物理重点实验室, 吉林 长春 130033
2 中国科学院研究生院, 北京 100039
以氧化铟为主体材料, 以铋为掺杂材料, 采用真空热蒸发方法研制出2.5%铋掺杂的透明导电氧化物薄膜(IBO)。实验表明：IBO薄膜具有良好的表面形貌, 载流子浓度为3.955×1019 cm-3, 载流子迁移率达到50.21 cm2·V-1·s-1, 电导率为 3.143×10-3 Ω·cm, 在可见光范围内的平均透过率超过82%, 功函数为4.76 eV。采用其作为阳极制作的OLED得到最大亮度30 230 cd/m2, 最大电流效率为5.1 cd/A。结果表明IBO是一种良好的光电器件阳极材料。
透明导电氧化物 掺杂 有机电致发光器件 transparent conducting oxide doped In2O3 In2O3 Bi2O3 Bi2O3 organic light-emitting device
