Emission and capture characteristics of a deep hole trap (H1) in n-GaN Schottky barrier diodes (SBDs) have been investigated by optical deep level transient spectroscopy (ODLTS). Activation energy (E_emi) and capture cross-section (σ_p) of H1 are determined to be 0.75 eV and 4.67 × 10^?15 cm², respectively. Distribution of apparent trap concentration in space charge region is demonstrated. Temperature-enhanced emission process is revealed by decrease of emission time constant. Electric-field-boosted trap emission kinetics are analyzed by the Poole?Frenkel emission (PFE) model. In addition, H1 shows point defect capture properties and temperature-enhanced capture kinetics. Taking both hole capture and emission processes into account during laser beam incidence, H1 features a trap concentration of 2.67 × 10¹⁵ cm^?3. The method and obtained results may facilitate understanding of minority carrier trap properties in wide bandgap semiconductor material and can be applied for device reliability assessment.

长余辉材料在安全指示、防伪和生物成像等领域具有广泛应用前景, 但其缺陷调控及余辉机理尚不清晰。自激活长余辉材料以其物质组成及晶体结构简单, 便于研究余辉机理而受到关注。本研究以自激活长余辉材料锗酸锌为基质, 采用高温固相反应合成得到了一系列钙掺杂的长余辉材料Zn_2-xCa_xGeO₄(x=0、0.1、0.2、0.3、0.4、0.5)。实验表明, 在锗酸锌中掺杂钙元素后, 使用376 nm紫外光激发时,观察到锗酸锌基质样品的黄色发光峰; 同时在267 nm激发下, Zn_1.5Ca_0.5GeO₄荧光强度增强了6.2倍。从余辉光谱和余辉衰减曲线上看, Zn_1.5Ca_0.5GeO₄初始余辉强度增强了25.1倍; 并且在所考察的300 s余辉时间里, 与锗酸锌相比, Zn_1.5Ca_0.5GeO₄保持了近5倍的余辉强度。进一步热释曲线表征显示, 材料主要陷阱的深度在0.7 eV左右; 加入合适浓度的Ca²⁺后, 其热释峰显著变强, 表明钙掺杂后陷阱密度显著增加。最后利用不同发射波长的余辉衰减差别, 实现了“花朵”颜色的动态变化, 表明所得材料在动态防伪领域具有一定应用前景。

To obtain cold atom samples with temperatures lower than 100 pK in the cold atom physics rack experiment of the Chinese Space Station, we propose to use the momentum filtering method for deep cooling of atoms. This paper introduces the experimental results of the momentum filtering method verified by our ground testing system. In the experiment, we designed a specific experimental sequence of standing-wave light pulses to control the temperature, atomic number, and size of the atomic cloud. The results show that the momentum filter can effectively and conveniently reduce the temperature of the atomic cloud and the energy of Bose–Einstein condensation, and can be flexibly combined with other cooling methods to enhance the cooling effect. This work provides a method for the atomic cooling scheme of the ultra-cold atomic system on the ground and on the space station, and shows a way of deep cooling atoms.

Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with different Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV–Vis spectrophotometry and photoconductivity study. The variation observed in the properties of the measured films agrees with a difference in the film's thickness, which decreases when Al concentration augments. X-ray diffraction analysis reveals that all films are polycrystalline with tetragonal structure, (110) plane being the strongest diffraction peak. The crystallite size calculated by the Debye Scherrer’s formula decreases from 11.92 to 8.54 nm when Al concentration increases from 0 to 5 wt.%. AFM images showed grains uniformly distributed in the deposited films. An average transmittance greater than 80% was measured for the films and an energy gap value of about 3.9 eV was deduced from the optical analysis. Finally, the photosensitivity properties like current–voltage characteristics,I_ON/I_OFF ratio, growth and decay time are studied and reported. Also, we have calculated the trap depth energy using the decay portion of the rise and decay curve photocurrent.Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with different Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV–Vis spectrophotometry and photoconductivity study. The variation observed in the properties of the measured films agrees with a difference in the film's thickness, which decreases when Al concentration augments. X-ray diffraction analysis reveals that all films are polycrystalline with tetragonal structure, (110) plane being the strongest diffraction peak. The crystallite size calculated by the Debye Scherrer’s formula decreases from 11.92 to 8.54 nm when Al concentration increases from 0 to 5 wt.%. AFM images showed grains uniformly distributed in the deposited films. An average transmittance greater than 80% was measured for the films and an energy gap value of about 3.9 eV was deduced from the optical analysis. Finally, the photosensitivity properties like current–voltage characteristics,I_ON/I_OFF ratio, growth and decay time are studied and reported. Also, we have calculated the trap depth energy using the decay portion of the rise and decay curve photocurrent.

以卤钨灯积分球光源作为辐射源、用宽谱段陷阱探测器同步监测的传统稳定性参数测试方法存在光谱带宽不匹配、数据对齐困难等问题，导致测量准确性不能保证。因此提出用多角度偏振成像仪自身的图像数据替代陷阱探测器监测数据的方案，对多角度偏振成像仪12个通道数据分别进行小波分解，提取出各波段的光源能量变化用于稳定性测量数据校正，有效去除光源稳定性影响，提升仪器稳定度参数测量准确性。用该方案扣除光源波动后，载荷的非稳定性参数结果从0.153%减小至0.031%。提取出的同一波段三检偏方向光源辐射能量变化趋势高度一致，对多帧图像法信噪比计算结果提升更明显，有力证明方案的有效性。该方案可用于各类成像型遥感仪器的稳定性参数测试。