A novel direct writing technique using submicron-diameter fibers is presented. This technique adopts contact mode in the process of writing, and submicron lines with different widths have been obtained. Experimental results demonstrate that the resolution of this technique can be smaller than the exposure wavelength of 442 nm, and 380-nm-wide line is achieved. In addition, the distribution of light fields in the photoresist layer is analyzed by finite-difference time-domain method.

提出了一种利用微纳光纤笔(MNFP)直接写入亚微米线条的技术,利用微纳光纤笔在光刻胶表面接触式扫描,从而曝光产生亚微米线条。热熔拉伸和湿法刻蚀两步工艺相结合的新方法被用来制做微纳光纤笔。实验研究表明,直写分辨率可以达到稳定的200 nm线宽。这一分辨率已经突破了曝光波长(442 nm)的衍射极限。结果也显示了,通过改变光强,微纳光纤笔可以直写曝光出亚微米范围内宽度可变的线条。