作者单位
摘要
1 长春理工大学 科技园,长春 130022
2 重庆光电技术研究所,重庆 400060
3 长春理工大学 高功率半导体激光国家重点实验室,长春 130022
为改善高功率垂直腔面发射激光器(VCSEL)电流注入均匀性,提高光束输出质量和器件的输出功率,设计并研制出808nm高功率网状电极VCSEL。将VCSEL P面的注入电极由传统的环形结构改为网状结构并且热沉位于N面电极。实验制备了出光孔径同为500μm的传统环形电极和网状电极两种高功率VCSEL,并对器件的性能进行了对比测试。测试结果表明,网状电极结构高功率VCSEL相对传统环形电极结构高功率VCSEL器件具有良好的光电特性,室温下新结构高功率VCSEL的阈值电流为430mA,斜率效率为0.44mW/mA,电光转换效率可达21.7%,最大输出功率可达420mW,是传统结构高功率VCSEL输出功率的2.27倍。
垂直腔面发射半导体激光器 网状电极 高功率 近场发光均匀性 VCSEL reticular electrode highpower homogeneity in nearfield pattern 
半导体光电
2011, 32(6): 781
Author Affiliations
Abstract
National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
The enlargement of the emitting aperture is usually one of the important methods of increasing verticalcavity surface-emitting laser (VCSEL) optical output power. However, in a VCSEL with a larger aperture, the inhomogeneity in the injected current often causes inhomogeneous or even no emission. To solve this problem and to increase VCSEL output power, as well as to improve its thermal characteristics, we develop a new type of injected VCSEL with a larger aperture and a reticular electrode, where the conventional circular injection electrode of the P side is turned into a reticular one, and the heat sink is on the N side. The tests of the new VCSEL show an improvement in homogeneity in not only the injected current but also the emission intensity. The optical output power is also considerably increased, and the device optoelectronic performance is improved.
垂直腔面发射半导体激光器 网状注入电极 近场发光均匀性 发射光强 光电转换效率 140.0140 Lasers and laser optics 140.7260 Vertical cavity surface emitting lasers 250.7260 Vertical cavity surface emitting lasers 140.5960 Semiconductor lasers 
Chinese Optics Letters
2010, 8(8): 773

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