用光发射谱(OES)和喇曼散射谱(Raman)研究了VHF-PECVD制备硅薄膜的结构特性.OES测试结果表明:随功率增加,对应各基团峰的强度增大;结合喇曼的测试结果,OES谱得到的结果可以用来定性地表征制备薄膜的晶化程度;纯化器可以降低制备薄膜中的氧含量,Raman测试结果表明相应的晶化率低.

Structural properties of silicon thin film deposited by VHF-PECVD were studied using OES and Raman spectroscopy. The results of OES measurement showed that the intensity of peaks of different precursors increased with the increase of discharge power. According to the results obtained from Raman, OES can be used to qualitatively characterize the crystalline extent. The use of purifier can decrease the oxygen content of films, crystalline volume fraction (X c) derived from Raman measurement simultaneously indicated low value.