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晶格失配对InAsxP1-x/InP发光特性的影响

Lattice Mismatch Effect on Photoluminescence from InAsxP1-x/InP Heterostructuer

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摘要

采用低压金属有机化学气相沉积(LP-MOCVD)技术,在掺Fe的半绝缘InP衬底上制备了InAs0.157P0.843外延层。利用变温光致发光研究了InAs0.157P0.843外延层在13~300 K温度范围内的发光特性,通过理论分析与计算,证实了在应力作用下InAs0.157P0.843外延层价带顶的轻重空穴带发生了劈裂,并研究了导带底与价带顶轻空穴带之间形成的复合发光峰在应力作用下随温度的变化规律。

Abstract

The variable-temperature photoluminescence spectra of strained InAsxP1-x/InP heterostructuer were experimentally determined in the temperature range 13~300 K. A theoretical calculation was presented that takes into account the temperature-induced variations in band gap and biaxial strain to explain the PL spectra. The results showed that strain which is induced by lattice mismatch between epitaxial layer and substrate removes the degeneracy between the light- and heavy-hole states at the top of the valence band, and with temperature under 100 K,the recombinations from the conduction band to the split valence bands are both observed in the photoluminescence spectra. As temperature is raised,it results in an increasingly larger light-hole population than that of heavy-hole due to thermalization, so when temperature is beyond 100 K only the recombination from the conduction band to the light-hole state can be observed.We also find that the energy of the recombination between the conduction band and the light-hole and heavy-hole state changes as a function of temperature.

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中图分类号:O482.31

基金项目:国家自然科学基金重点(50632060)资助项目

收稿日期:2008-08-25

修改稿日期:2008-11-24

网络出版日期:0001-01-01

作者单位    点击查看

阎大伟:中国科学院激发态物理重点实验室, 中国科学院长春光学精密机械与物理研究所, 吉林 长春130033中国科学院 研究生院, 北京100049
宋航:中国科学院 研究生院, 北京100049
缪国庆:中国科学院 研究生院, 北京100049
于淑珍:中国科学院激发态物理重点实验室, 中国科学院长春光学精密机械与物理研究所, 吉林 长春130033中国科学院 研究生院, 北京100049
蒋红:中国科学院 研究生院, 北京100049
李志明:中国科学院 研究生院, 北京100049
刘霞:中国科学院激发态物理重点实验室, 中国科学院长春光学精密机械与物理研究所, 吉林 长春130033中国科学院 研究生院, 北京100049
曹连振:中国科学院激发态物理重点实验室, 中国科学院长春光学精密机械与物理研究所, 吉林 长春130033中国科学院 研究生院, 北京100049
郭万国:中国科学院激发态物理重点实验室, 中国科学院长春光学精密机械与物理研究所, 吉林 长春130033中国科学院 研究生院, 北京100049
孙晓娟:中国科学院 研究生院, 北京100049

联系人作者:阎大伟(clever1984@sina.com)

备注:阎大伟(1984-), 男, 河南焦作人, 主要从事Ⅲ-Ⅴ族半导体材料的研究

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引用该论文

YAN Da-wei,SONG Hang,MAO Guo-qing,YU Shu-zhen,JIANG Hong,LI Zhi-ming,LIU Xia,CAO Lian-zhen,GUO Wan-guo,SUN Xiao-juan. Lattice Mismatch Effect on Photoluminescence from InAsxP1-x/InP Heterostructuer[J]. Chinese Journal of Luminescence, 2009, 30(3): 309-313

阎大伟,宋航,缪国庆,于淑珍,蒋红,李志明,刘霞,曹连振,郭万国,孙晓娟. 晶格失配对InAsxP1-x/InP发光特性的影响[J]. 发光学报, 2009, 30(3): 309-313

被引情况

【1】叶志成,舒永春,曹雪,龚亮,姚江宏,皮彪,邢晓东,许京军. InxGa1-xAs/GaAs量子阱应变量对变温光致发光谱的影响. 发光学报, 2011, 32(2): 164-168

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