采用多种波段内激光辐照带有电容反馈互导放大器（CTIA）读出电路的PV型线阵HgCdTe探测器，实验均发现，当激光功率密度增强到约10-2 W/cm2时，未辐照像素也存在响应，且其基底信号出现以前未曾发现的反常响应，即随功率密度的增加，未辐照像素基底信号的响应值先下降后上升，并且噪声增大。针对这一反常响应现象进行了深入研究，结果表明器件内部公共P级结构、电路共用Vref电压结构是导致这一反常响应的主要原因。

The photovoltaic HgCdTe detectors with capacitive transimpedance amplifiers (CTIA) readout circuit is irradiated by various in-band lasers. All is found that the nonirradiated detection units′ basal signals have responded, when the incident laser power density increases about to 10-2 W/cm2. The responded value initially decreases and then increases, and the noise increases with the power density increasing. With further investigation, it is demonstrated that the paradoxical responded phenomenon is primarily caused by the public P pole structure of linear array detectors and the public Vref voltage structure of circuits.