以目前激光惯性约束聚变中应用最广泛的高折射率材料二氧化铪(HfO2)为研究对象, 在熔石英基底上分别采用TEMAH和HfCl4前驱体制备了HfO2薄膜, 沉积温度分别为100, 200和300 ℃。采用椭偏仪和激光量热计对薄膜的光学性能进行了测量分析, 采用X射线衍射仪(XRD)对薄膜的微结构进行了测量。最后在小口径激光阈值测量平台上按照1-on-1测量模式对薄膜的损伤阈值进行了测试, 并采用扫描电子显微镜(SEM)对损伤形貌进行了分析。研究表明, 用同一种前驱体源时, 随着沉积温度升高, 薄膜折射率增加, 吸收增多, 损伤阈值降低。在相同温度下, 采用有机源制备的薄膜更容易在薄膜内部形成有机残留, 导致薄膜吸收增加, 损伤阈值降低。采用HfCl4作为前驱体源在100℃制备氧化铪薄膜时, 损伤阈值能够达到31.8 J/cm2 (1064 nm, 3 ns)。

In this paper, ALD was used to deposit HfO2 single layer films with organic and inorganic precursors at 100, 200 and 300 ℃, respectively. Optical properties such as film absorption, refractive index and microstructure were investigated. Especially, laser damage properties as a key property for thin films used as laser system components were analyzed using 1-on-1 measurement method. Laser damage morphologies were analyzed by scan electron microscope (SEM). For the HfO2 thin films deposited with different process parameters, the damage was mainly caused by film absorption and crystallization. When the HfCl4 precursor was used at 100 ℃, HfO2 films had the least absorption and the best LIDT (about 31.8 J/cm2, 1064 nm, 3 ns), which was the best result as reported.