中国激光, 2020, 47 (7): 0701026, 网络出版: 2020-07-10
2.75 μm中红外GaSb基五元化合物势垒量子阱激光器 下载: 1134次特邀研究论文
2。75-μm Mid-Infrared GaSb-Based Quantum Well Lasers with Quinary Alloy Barrier
摘要
设计制备了GaSb基I型InGaAsSb量子阱激光器,其激射波长为2。75 μm。五元势垒材料AlGaInAsSb有效降低了势垒的价带能级并提高了价带带阶,使量子阱发光波长红移至2。75 μm波段。通过优化分子束外延生长参数,得到了高发光效率的量子阱激光器外延材料,在此基础上设计并制备了腔长为1。5 mm、脊宽为50 μm、中心波长为2。75 μm的法布里-珀罗腔结构的激光器;所设计激光器可以实现室温连续激射,其最大输出功率为60 mW,阈值电流密度为533 A·cm -2。
Abstract
Based on the I-type quantum well of the GaSb system, lasers with a lasing wavelength of 2。75 μm was fabricated. The valence band level of the barrier was effectively reduced, and the valence band order was increased using the quinary barrier material AlGaInAsSb. Additionally, the luminescence wavelength of the quantum well red shifted to 2。75-μm band. The optimal epitaxial parameters of the quantum well were obtained by optimizing the growth parameters of molecular beam epitaxy, and a Fabry-Perot laser device with a cavity length of 1。5 mm, ridge width of 50 μm, and central wavelength of 2。75 μm was fabricated. The laser realizes continuous lasing at room temperature, and its maximum output power and threshold current are 60 mW and 533 A·cm -2, respectively.
袁野, 柴小力, 杨成奥, 张一, 尚金铭, 谢圣文, 李森森, 张宇, 徐应强, 宿星亮, 牛智川. 2.75 μm中红外GaSb基五元化合物势垒量子阱激光器[J]. 中国激光, 2020, 47(7): 0701026. Yuan Ye, Chai Xiaoli, Yang Chengao, Zhang Yi, Shang Jinming, Xie Shengwen, Li Sensen, Zhang Yu, Xu Yingqiang, Su Xingliang, Niu Zhichuan. 2。75-μm Mid-Infrared GaSb-Based Quantum Well Lasers with Quinary Alloy Barrier[J]. Chinese Journal of Lasers, 2020, 47(7): 0701026.