干法刻蚀工艺对TFT-LCD Flicker改善的研究

李鑫; 卞丽丽; 陈曦; 吴成龙; 贠向南

doi:doi:10.3788/yjyxs20153006.0904

液晶与显示, 2015, 30 (6): 904, 网络出版: 2016-01-19

干法刻蚀工艺对TFT-LCD Flicker改善的研究

Improvement of flicker TFT-LCD by dry etching process

论文大纲

李鑫卞丽丽陈曦吴成龙贠向南

作者单位

福州京东方光电科技有限公司，福建福州 350330

干法刻蚀 TFT特性闪烁改善 dry etch TFT characteristics flicker improvement

摘要

为了对TFT-LCD中的闪烁不良进行改善，本文通过研究TFT-LCD中干法刻蚀（Nplus Etch）对TFT特性的影响，以此对刻蚀条件（Power、Gas）进行优化，达到降低Photo-Ioff的目的。实验结果表明，当干法刻蚀主工艺条件为：Source/Bias=4 k/5 k、Press=90 mT、SF6/O2=1.1 k/3 kml/min，AT Step条件为：Source/Bias=2 k/2 k、Press=100 mT、SF6/O2=3 k/3 kmL/min时，Photo-Ioff由量产最初的58.15降至20.52，闪烁由15%~30%降至10%以下。干法刻蚀工艺条件的优化对TFT特性以及闪烁有明显改善效果。

Abstract

To improve the flicker in TFT-LCD，by studying the influence of Dry Etch(Nplus Etch) on TFT characteristics, the etching conditions (power and gas) were optimized, and the Photo-Ioff was reduced, then the flicker was improved.Experimental results show that when the main process conditions of Nplus Etch were: Source/Bias=4 k/5 k, Press=90 mT, SF6/O2=1.1 k/3 kmL/min and the conditions of AT Step were:Source/Bias=2 k/2 k, Press=100 mT, SF6/O2=3 k/3 kmL/min, the Photo-Ioff fell from 58.15 to 20.52 and the flicker fell from 15%-30% to 10% or less.The optimization of Dry Etching process has obvious improvement to TFT characteristics and flicker.

参考文献

[1] 王明超，姚之晓，刘家荣，等.TFT-LCD中Ioff-p与画面闪烁关系的研究［J］.液晶与显示，2013，28(2)：215-219.

Wang M C, Yao Z X, Liu J R, et al.Relationship between flicker and Ioff-p in TFT-LCD ［J］.Chinese Journal of Liquid Crystals and Displays, 2013, 28(2): 215-219.(in Chinese)

[2] 徐益勤，张宇宁，李晓华.显示器件大面积闪烁视觉生理基础与改善方法［J］.电子器件，2008，31(5)：1417-1420.

Xu Y Q, Zhang Y N, Li X H.Physiology analysis and reduction method for large area flicker of displays ［J］.Chinese Journal of Electron Devices, 2008, 31(5): 1417-1420.(in Chinese)

[3] 姚之晓，王明超，林鸿涛，等.TFT漏电流对Flicker影响及测试方法研究［J］.现代显示，2012，23(10)：32-36.

Yao Z X, Wang M C, Lin H T, et al.Experiments of TFT Photo-leakage current impact on Flicker ［J］.Advanced Display, 2012, 23(10): 32-36.(in Chinese)

[4] 林鸿涛，王明超，姚之晓，等.TFT-LCD中画面闪烁的机理研究［J］.液晶与显示，2013，28(4)：567-571.

Lin H T, Wang M C, Yao Z X, et al.Mechanism research about flicker in TFT-LCD ［J］.Chinese Journal of Liquid Crystals and Displays, 2013, 28(4): 567-571.(in Chinese)

[5] 马占洁.改善a-Si TFT LCD像素电极跳变电压方法研究［J］.现代显示，2009(4)：19-22，27.

Ma ZJ.The investigation to improve kickback voltage of pixel electrode of a-Si TFT LCD ［J］.Advanced Display, 2009(4): 19-22, 27.(in Chinese)

[6] Isensee S H.Bennett C A.The perception of flicker and glare on computer CRT displays ［J］.Human Factors, 1983, 25(2): 177-184.

[7] Li C, Yan T, Wang L L.Investigation of flicker visibility in impulse type displays ［J］.Proceedings of Asia Display, 2007(1): 264-267.

[8] Son M S, Yoo K H, Jang J.Electrical simulation of the flicker in poly-Si TFT-LCD pixels for the large-area and high-quality TFT-LCD development and manufacturing ［J］.Solid-State Electronics, 2004, 48(12): 2307-2313.

[9] Huang C -C, Constable J H, Yost B, et al.AMLCD flicker model considering the VT shift in a-Si: H TFT［J］.IEEE Transactions on Device and Materials Reliability, 2003, 3(4): 184-190.

李鑫, 卞丽丽, 陈曦, 吴成龙, 贠向南. 干法刻蚀工艺对TFT-LCD Flicker改善的研究[J]. 液晶与显示, 2015, 30(6): 904. LI Xin, BIAN Li-li, CHEN Xi, WU Cheng-long, YUN Xiang-nan. Improvement of flicker TFT-LCD by dry etching process[J]. Chinese Journal of Liquid Crystals and Displays, 2015, 30(6): 904.

干法刻蚀工艺对TFT-LCD Flicker改善的研究

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