红外与毫米波学报, 2014, 33 (3): 256, 网络出版: 2014-06-30  

基于NEDI砷化镓肖特基二极管的D波段和G波段倍频源

Development of D-Band and G-Band frequency multiply sources with Schottky diodes of NEDI
作者单位
1 南京电子器件研究所 微波毫米波单片集成和模块电路重点实验室,江苏 南京210016
2 南京电子器件研究所 微波毫米波模块电路事业部,江苏 南京210016
摘要
基于南京电子器件研究所(NEDI)的GaAs工艺线,通过分析器件的有源层(缓冲层、外延层)材料掺杂浓度和厚度、肖特基接触面积等,综合优化二极管性能,研制出了截止频率为3.2THz的太赫兹变阻二极管.基于该二极管,通过建立其三维场结构,采用电磁场和电路仿真软件相结合的方法,一体化设计匹配电路和器件,研制出了D波段和G波段倍频源.D波段二倍频器在152.6GHz测得最高倍频效率为2.7%,在147.4~155GHz效率典型值为1.3%.G波段二倍频器在172GHz测得最高倍频效率为 2.1%,在150~200GHz效率典型值为1.0%.
Abstract
Terahertz Schottky varistor diode with cutoff frequency of 3.2THz was developed based on GaAs process of Nanjing Electronic Devices Institute (NEDI). The performances of diodes are optimized by optimization of active layer (expital layer and buffer layer) doping, thickness, and Schottky contact area. Physical structure of the nonlinear diode was setup, and EM software and circuit software were combined together for impedance matching analysis. For the D-band doubler, highest measured multiply efficiency is 2.7% at 152.6GHz, and typical efficiency is 1.3% in 147.4~155GHz. For the G-band doubler, highest measured multiply efficiency is 2.1% at 172GHz, and typical efficiency is 1.0% in 150~200GHz.
参考文献

[1] [DB/OL]: http: ∥www.virginiadiodes.com/

[2] Yao C F. Research on Microwave and Millimeter Wave Frequency Mixing and Multiplying Techniques and their Applications[D]. Nanjing: Southeast University, 2010.

[3] Graauw T. The Herschel-Heterodyne Instrument for the Far-Infrared (HIFI)[J]. Astronomy & Astrophysics, 2010, 5(8): 17.

[4] Jones J R, Bishop W L, Jones S H, et al. Planar multibarrier 80/240GHz heterostructure barrier varactor triplers[J]. IEEE Transaction on Microwave Theory Techniques, 1997, 45(4): 512517.

[5] Xiao Q, Hesel J L, Crowe T W, et al. High-efficiency heterostructure-barrier-varactor frequency triplers using AlN substrates[C]. IEEE MTT-S International Microwave Symposium Digest. California: 2005: 1217.

[6] Vukusic J, Tomas B, T. Arezoo E, et al. A 0.2W heterostructure barrier varactor frequency tripler at 113GHz.[J]. IEEE Trans. Electron Devices Letters, 2007, 28(5): 340342.

[7] Maestrini A, Ward J S, Gill J J, et al. A 540640GHz high-efficiency four-anode frequency tripler[J]. IEEE Transaction on Microwave Theory Techniques, 2005, 53(9): 28352843.

[8] Maestrini A, Ward J S, Canseliet C T, et al. In-phase power-combined frequency triplers at 300 GHz[J]. IEEE Transaction on Microwave Wireless Components Letters, 2008, 18(3): 218220.

[9] Maestrini A, Ward J S, Chattopadhyay G, et al. THz sources based on frequency multiplication and their applications[J]. Journal of RF-Engineering and Telecommunications, 2008, 5(6): 118122.

[10] Crowe T W, Matmuch R J, Roser H P, et al. GaAs Schottky Diodes for THz Mixing Applications[J]. Procedding of the IEEE, 1992, 80(11): 18271841.

[11] Rizzi B J. Planar Varactor Diodes for Millimeter and Submillimeter wavelengths[D]. Virginia: University of Virginia, 1992.

[12] Archer J W. A high performance frequency doubler for 80 to 120GHz[J]. IEEE Transaction on Microwave Theory and Techniques, 1982, 30(5): 824825.

[13] Porterfield D W, Crowe T W, Bradley R F, et al. A high-power fixed-turned millimeter-wave balanced frequency doubler[J]. IEEE Transaction on Microwave Theory Techniques, 1999, 47(4): 419425.

[14] Maas S A. Nonlinear Microwave and RF Circuits[M]. Boston, Arech House, 2003.

姚常飞, 周明, 罗运生, 林罡, 李姣, 许从海, 寇亚男, 吴刚, 王继财. 基于NEDI砷化镓肖特基二极管的D波段和G波段倍频源[J]. 红外与毫米波学报, 2014, 33(3): 256. YAO Chang-Fei, ZHOU Ming, LUO Yun-Sheng, LIN Gang, LI Jiao, XU Cong-Hai, KOU Ya-Nan, WU Gang, WANG Ji-Cai. Development of D-Band and G-Band frequency multiply sources with Schottky diodes of NEDI[J]. Journal of Infrared and Millimeter Waves, 2014, 33(3): 256.

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