[1] . K. Rath. Low temperature polycrystalline silicon: a review on deposition, physical properties and solar cell applications[J]. Solar Energy Materials & Solar Cells, 2003, 76: 431-487.

[2] Tobias Roschek. Microcrystalline silicon solar cells prepared by 13.56 MHz PECVD[D]. Institute of Photovoltaic, Jülich, Germany, 2003. 2;

[3] . Veprek, V. Marecek. The preparation of thin layers of Ge and Si by chemical hydrogen plasma transport[J]. Solid-State Electronics, 1968, 11(7): 683-684.

[4] . Usui, M. Kikuchi. Properties of heavily doped gd-Si with low resistivity[J]. Non-Cryst. Solids, 1979, 34: 1-11.

[5] Rund E.L. Schropp,Miro Zeman. Amorphous and microcrystalline silicon solar cell: modeling materials and device technology [M]. America: Kluwer Academic Publisher, 1998, 5

[6] C. Wang, G. Lucovsky. Intrinsic microcrystalline silicon deposited by remote PECVD: a new thin-film photovoltaic material[C]. Proc. of the 21st IEEE Photovoltaic Specialists Conference, 1990, 2:1614～1618

[7] . Meier, R.Fluckiger, H. Keppner et al.. Complete microcrystalline p-i-n solar cell-crystalline or amorphouse cell behavior[J]. Appl. Phys. Lett., 1994, 65(7): 860-862.

[8] Rund E.L. Schropp,Miro Zeman. Amorphous and microcrystalline silicon solar cell: modeling materials and device technology [M]. Masschusatts: Kluwer Academic Publisher, 1998, 5

[9] . Mai, S. Klein, R.Carius et al.. Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers[J]. Appl. Phys. Lett., 2005, 87: 073503.

[10] J. Meier, S. Dubail, R. Fluckiger et al.. Intrinsic microcrystalline silicon(μc-Si:H)- a promising new thin film solar cell material[C]. Proc. 1st WCPEC, Hawaii, 1994, 409～412

[11] . Yamamoto, M Yoahimi, Y tawada et al.. Large area thin film Si module[J]. Solar Energy Mat. Solar Cells, 2002, 74: 449-455.

[12] Zhao Ying, Zhang Xiaodan, Zhu Feng et al.. Fabrication of high efficiency a-Si:H/μc-Si:H tandem solar cell modules[C]. 15th International Photovoltaic Science and Engineering Conference(PVSEC-15), Shanghai: 2005,65～67

[13] . 热丝化学气相沉积技术低温制备多晶硅薄膜的结构与光电特性[J]. 物理学报, 2004, 52(2): 2934-2938.

[14] . 非晶/微晶过渡区域硅薄膜的微区喇曼散射研究[J]. 物理学报, 2003, 51(11): 1811-1814.

[15] . Vetterl, F. Finger, R. Carius et al.. Instrinsic microcrystalline silicon: a new material for photovoltaics[J]. Solar Energy Materials & Solar Cells, 2000, 62: 97-108.

[16] C. Droz. Thin film microcrystalline silicon layers and solar cells: microstructure and electrical performances[D]. Institut de Microtechnique, Université de Neuchatel, Swiss, 2003

[17] . T. Voutsas, M. K. Hatalis, J. Boyce et al.. Raman spectroscopy of amorphous and microcrystalline silicon films deposited by low-pressure chemical vapor deposition[J]. J. Appl. Phys., 1995, 78(12): 6999-7006.

[18] Rath, J.k., H. Meiling, R.E.I. Schropp. Purely intrinsic poly-Si films for n-i-p solar cells[J]. Jpn. J. Appl. Phys., 1997, 36(9A):5436～5443

[19] A.Shah, J.Meier, E.Vallat-Sauvain et al.. Microcrystalline and micromorph tandem solar cells[J]. Thin Solid Films, 2002, 403-404:179～187

[20] Rund E.L. Schropp,Miro Zeman. Amorphous and microcrystalline silicon solar cell: modeling materials and device technology [M]. Massachusatts Kluwer Academic Publisher, 1998, 52

[21] M. Vaněck, A. Poruba, Z. Remes et al.. Optical properties of microcrystalline materials[J] . Non-Cryst. Solids, 1998, 227-230:967～972

[22] 张晓丹. 器件质量级微晶硅薄膜及高效微晶硅太阳能电池制备的研究[D]. 天津：南开大学, 2005

[23] . Microcrystalline materials and cells deposited by RF glow discharge[J]. Solar Energy Materials & Solar Cells, 2003, 78: 543-566.

[24] T. Roschek, T. Repmann, J. Müller et al.. Comprehensive study of microcrystalline silicon solar cells deposited at high rate using 13.56MHz plasma-enhanced chemical vapor deposition[J]. J. Jac.Sci. & Technol., 2002, A20(2):492～498

[25] . Kroll, A. Shah, H. Keppner et al.. Potential of VHF-plasmas for low-cost of a-Si:H solar cells[J]. Solar Energy Materials and Solar Cells, 1997, 48: 343-350.

[26] Y. Mai, S. Klein, J. Wolff et al.. Microcrystalline silicon solar cells deposited at high rates by combination of VHF-PECVD and high working pressure[C]. preprint-19th EU PVSEC, Paris, 2004

[27] . K. Rath, A.J. Hardeman, C.H.M. van der Werf et al.. Deposition of HWCVD poly-Si films at a high growth rate[J]. Thin Solid Films, 2003, 430: 67-72.

[28] S. Klein, F. Finger, R.Carius et al.. High efficiency thin film solar cells with intrinsic microcrystalline silicon prepared by hot wire CVD [C]. Mat. Res. Soc. Symp. Proc., 2002, 715, A26.2

[29] . V. Shah, J. Meier, E. Vallat-Sauvain et al.. Material and solar cell research in microcrystalline silicon[J]. Solar Energy Materials & Solar Cells, 2003, 78: 469-491.