InP基InGaAs/InP雪崩光电二极管（APD）对近红外光具有高敏感度，使其成为微弱信号和单光子探测的理想光电器件。然而随着先进器件结构越来越复杂，厚度尺寸从量子点到几微米不等，性能越来越受材料中晶格缺陷的影响和工艺条件的制约。采用固态源分子束外延（MBE）技术分别在As和P气氛保护下对InP衬底进行脱氧处理并外延生长晶格匹配的In0.53Ga0.47As薄膜和APD结构材料。实验结果表明，As脱氧在MBE材料质量方面比P脱氧具有明显的优势，可获得陡直明锐的异质结界面，降低载流子浓度，提高霍尔迁移率，延长少子寿命，并抑制器件中点缺陷或杂质缺陷引起的暗电流。因此，As脱氧可以有效提高MBE材料的质量，这项工作优化了InP衬底InGaAs/InP外延生长参数和器件制造条件。

InP-based InGaAs/InP avalanche photodiodes (APDs) have high sensitivity to near-infrared light, making them ideal optoelectronic devices for weak signal and single-photon detection. However, as device structures become complex and advanced, with thickness and sizes ranging from quantum dots to several micrometers, performance is increasingly constrained by defects in the lattice of the material and the process conditions. Solid source molecular beam epitaxy (MBE) technology was used to deoxidize InP substrates under the atmosphere As and P, respectively, and epitaxially grow lattice-matched In_0.53Ga_0.47As film and InGaAs/InP avalanche APD full-structure materials. The experiment results demonstrate that As deoxidation has a distinct advantage over P deoxygenation in terms of MBE material quality, which can make a straight and sharp heterojunction interface, lower carrier concentrations, higher Hall mobilities, longer minority carrier lifetimes, and achieve suppression of dark current caused by point defects or impurity defects in the device. Therefore, As deoxidation can be applied effectively to enhance the quality of MBE materials. This work optimizes InP substrate InGaAs/InP epitaxial growth parameters and device fabrication conditions.