发光学报, 2011, 32 (12): 1292, 网络出版: 2012-01-04   

半导体激光器腔面增透膜AlN薄膜的制备

Deposition of AlN Film for AR Coating of Semiconductor Lasers
作者单位
长春理工大学 高功率半导体激光国家重点实验室, 吉林 长春130022
引用该论文

周路, 王云华, 贾宝山, 白端元, 张斯钰, 乔忠良, 高欣, 薄报学. 半导体激光器腔面增透膜AlN薄膜的制备[J]. 发光学报, 2011, 32(12): 1292.

ZHOU Lu, WANG Yun-hua, JIA Bao-shan, BAI Duan-yuan, ZHANG Si-yu, QIAO Zhong-liang, GAO Xin, BO Bao-xue. Deposition of AlN Film for AR Coating of Semiconductor Lasers[J]. Chinese Journal of Luminescence, 2011, 32(12): 1292.

参考文献

[1] Ziegler M, Tomm J W, Reeber D, et al. Catastrophic optical mirror damage in diode lasers monitored during single-pulse operation [J]. Appl.Phys. lett., 2009, 94(19):191101-1-4.

[2] Silfvenius C, Sun Y T, Blixt P, et al. Nitride facet passivation raises reliability, COMD and enables high temperature operation of InGaAs and InAlGaAs lasers [J]. SPIE, 2005, 5711:189-199.

[3] Li Z J, Hu L M,Wang Y, et al. Coating for 808 nm Al-containing semiconductor laser diodes [J]. Optics and precision Engineering (光学 精密工程), 2010, 18(6):1258-1263(in Chinese).

[4] Cao X, Luo J S, Chen T S. AlN/GaAs Interface analyses by anger electron spectroscopy and X-ray photoelectron spectroscopy [J]. Chin. J. Semiconductors(半导体学报), 1999, 20(7):539-542 (in Chinese).

[5] Jiang Jianping. Semiconductor Laser [M]. Beijing: Electronic Industry Press, 2001:153-155.

[6] Monch W. Growth of AlN on GaAs (110) by reactive molecular beam deposition [J]. Vacuum Science & Technology,1992, 10(4):1735-1739.

[7] Tang Jinfa, Gu peifu, Liu Xu. Morden Optical Film Technology [M]. Hangzhou: Zhejiang University Press, 1983.

[8] Zhao S X, Wackelgard E. The optical properities of sputtered composite of Al-AlN [J]. Solar Energy Materials & Solar Cells, 2006, 13(90):1861-1874

[9] Tong H B, Ba D C,Wen L S. Sputtering conditions and optical properties of AlN films [J].Chin. J. Vacuum Science and Technology (真空科学与技术学报), 2007, 27(4):332-335(in Chinese).

周路, 王云华, 贾宝山, 白端元, 张斯钰, 乔忠良, 高欣, 薄报学. 半导体激光器腔面增透膜AlN薄膜的制备[J]. 发光学报, 2011, 32(12): 1292. ZHOU Lu, WANG Yun-hua, JIA Bao-shan, BAI Duan-yuan, ZHANG Si-yu, QIAO Zhong-liang, GAO Xin, BO Bao-xue. Deposition of AlN Film for AR Coating of Semiconductor Lasers[J]. Chinese Journal of Luminescence, 2011, 32(12): 1292.

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