Ca掺杂对CuCrO<sub>2</sub>薄膜形成和电学特性的影响

胡冰; 揣雅惠; 付洋; 李雅丹; 沈宏志; 张红; 杨悦; 王一丁

doi:doi:10.3788/gzxb20144312.1216002

光子学报, 2014, 43 (12): 1216002, 网络出版: 2014-12-26

Ca掺杂对CuCrO₂薄膜形成和电学特性的影响

Effect of Ca-doping on the Formation and Electrical Property of CuCrO₂ Films

论文大纲

胡冰 ^*揣雅惠付洋李雅丹沈宏志张红杨悦王一丁

作者单位

吉林大学电子科学与工程学院, 集成光电子学国家重点实验室吉林大学实验区, 长春 130012

溶胶-凝胶掺杂旋涂薄膜生长退火晶相分层体系 Sol-gel Doping Spin coating Film growth Annealing Crystalline phase Hierarchical systems

摘要

采用溶胶凝胶法制备CuCrCaO2薄膜,研究不同气氛、退火温度下, Ca掺杂量对薄膜的形成和电学特性的影响.在N2环境中1 100 ℃退火, 制得CuCr1-xCaxO2 (x=0、0.01、0.03、0.05、0.07)薄膜.测量CuCrCaO2薄膜的X射线衍射, 在低浓度Ca掺杂时, 薄膜结晶良好, 晶格常数a、c和平均晶粒尺寸n随掺杂浓度上升而上升;高浓度Ca掺杂时, 有杂相生成, a、c、n重新变小, 和X射线衍射分析结果相吻合.另将3%Ca掺杂量, 分层旋涂后的薄膜分别在空气和N2中以不同温度快速退火, X射线衍射表明在N2条件下, 分层次的掺杂使CuCrCaO2结晶取向趋于单一, 并且退火温度越高, 择优取向越明显.用霍尔仪测量不同Ca掺杂量薄膜的电学特性, x=0.03时薄膜有最佳电导率1.22×10-1S/cm, 比未掺杂的薄膜提高了三个数量级, 说明适量Ca掺杂有助于提高薄膜电导率, 对应的薄膜载流子迁移率为1.77×1018 cm-3, 正的霍尔系数表明该材料是P型结构.

Abstract

CuCrCaO2 films were prepared by sol-gel.The effect of Ca-doping on the formation and electrical properties of the films with different environments and annealing temperatures was investigated.The CuCr1-xCaxO2(x=0,0.01,0.03,0.05,0.07)films are annealed at 1 100 ℃ in N2,XRD shows at low Ca concentration, the films have good crystallinities,lattice constant a,c and average grain size n increase with Ca concentration;at high Ca concentration impurity phases generate,makes a,c,n smaller,the results are identical with X-ray Diffraction(XRD).Besides,3%Ca hierarchical-mixed-spin-coating films are annealed quickly with different temperatures in air and N2 respectively.XRD shows hierarchical-mixed-spin-coating leads CuCrCaO2 to single crystal growth in N2 and has more obvious preferred orientation with higher annealed temperature.Using Hall instrument to measure films’ electrical properties with different Ca concentrations. The best conductivity is 1.22×10-1S/cm when x=0.03,which is three orders of magnitude higher than not doped films.It is shown that Ca doping helps to improve and the conductivity,the corresponding carrier mobility is 1.77 × 1018 cm-3,which means the material is P type structure.

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胡冰, 揣雅惠, 付洋, 李雅丹, 沈宏志, 张红, 杨悦, 王一丁. Ca掺杂对CuCrO₂薄膜形成和电学特性的影响[J]. 光子学报, 2014, 43(12): 1216002. HU Bing, CHUAI Ya-hui, FU Yang, LI Ya-dan, SHENG Hong-zhi, ZHANG Hong, YANG Yue, WANG Yi-ding. Effect of Ca-doping on the Formation and Electrical Property of CuCrO₂ Films[J]. ACTA PHOTONICA SINICA, 2014, 43(12): 1216002.

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