利用脉冲准分子激光(工作气体XeCl,波长308 nm,脉宽28 ns)在外延YBCOLaAlO3(100)单晶基片上淀积了Pb(Zr0.55Ti0.45)O3铁电薄膜,YBCO薄膜既为生长高取向PZT薄膜提供了晶体匹配条件,同时也为PZT铁电薄膜提供了下电极。讨论了工艺参数对晶相结构和表面形貌的影响。用X射线衍射表征了该多层膜的晶相结构,扫描电镜观察其表面形貌。PZT铁电薄膜的剩余极化为21 μC/cm,矫顽场为65 kV/cm。

Highly oriented Pb(Zr 0.55 Ti 0.45 )O 3(PZT) ferroelectric thin films have been grown on an epitaxial YBCO/LaAlO 3(100) single crystal substrate using pulsed laser deposition (XeCl excimer, λ=308 nm,τ=28 ns). The YBCO layer provides a seed for PZT growth and can also act as an electrode for the PZT thin films. These heterostructures were characterized using X ray diffraction, and the surface morphologies were observed using SEM. The PZT thin film showed a remnant polarization of 21 μC/cm2 and a coercive field of 65 kV/cm. The effects of processing parameters on structures and surface morphoiogies are discussed.