人工晶体学报, 2020, 49 (5): 771, 网络出版: 2020-08-06   

中红外激光晶体Dy∶PbGa2S4的生长与器件制备

Growth and Device Fabrication of Mid-infrared Laser Crystal Dy∶PbGa2S4
方攀 1,2袁泽锐 1,2陈莹 1,2尹文龙 1,3康彬 1,3
作者单位
1 中国工程物理研究院化工材料研究所,绵阳 621999
2 四川省新材料研究中心,成都 610200
3 中国工程物理研究院高能激光科学与技术重点实验室,绵阳 621999
摘要
镝掺杂硫镓铅(Dy∶PbGa2S4,Dy∶PGS)晶体是一种性能优良、具有潜在应用价值的中红外激光介质材料。为推动该晶体的实用化研究,迫切需要制备出大尺寸高品质Dy∶PGS单晶。本研究采用自制的双温区管式炉成功合成Dy∶PbGa2S4多晶,单次合成量达到230 g; 首次采用竖直梯度冷凝法制备该晶体并成功生长出大尺寸高质量Dy∶PbGa2S4单晶,尺寸达到27 mm×100 mm; 通过切割和抛光等处理工艺,成功加工出Dy∶PbGa2S4晶体器件,为下一步的激光应用研究打下了坚实基础。
Abstract
Dysprosium-doped lead thiogallate(Dy∶PbGa2S4, Dy∶PGS) crystal is a medium material for mid-infrared lasers with excellent performance and potential application value. To push forward its practical study, high quality large-sized Dy∶PGS single crystal is urgently required. In this study, an output of 230 g polycrystalline Dy∶PGS was successfully synthesized using a self-made two-zone furnace; a high quality Dy∶PGS single crystal with size of 27 mm×100 mm was grown by vertical gradient freezing method for the first time, and the Dy∶PGS crystal devices were achieved by cutting and polishing processes, laying a solid foundation for the further laser application research of this crystal.
参考文献

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方攀, 袁泽锐, 陈莹, 尹文龙, 康彬. 中红外激光晶体Dy∶PbGa2S4的生长与器件制备[J]. 人工晶体学报, 2020, 49(5): 771. FANG Pan, YUAN Zerui, CHEN Ying, YIN Wenlong, KANG Bin. Growth and Device Fabrication of Mid-infrared Laser Crystal Dy∶PbGa2S4[J]. Journal of Synthetic Crystals, 2020, 49(5): 771.

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