红外与毫米波学报, 2017, 36 (3): 257, 网络出版: 2017-07-05
高功率GaSb基2.6微米InGaAsSb/AlGaAsSb I型量子阱室温工作激光器
High power GaSb-based 2.6 μm room-temperature laser diodes with InGaAsSb/AlGaAsSb type I quantum-wells
基本信息
DOI: | 10.11972/j.issn.1001-9014.2017.03.001 |
中图分类号: | O43 |
栏目: | |
项目基金: | Supported by the National Basic Research Program of China (2014CB643903, 2013CB932904), the National Natural Science Foundation of China ( 61435012, 61306088, 61274013) |
收稿日期: | 2016-09-27 |
修改稿日期: | 2017-03-03 |
网络出版日期: | 2017-07-05 |
通讯作者: | 柴小力 (xlchai@semi.ac.cn) |
备注: | -- |
柴小力, 张宇, 廖永平, 黄书山, 杨成奥, 孙姚耀, 徐应强, 牛智川. 高功率GaSb基2.6微米InGaAsSb/AlGaAsSb I型量子阱室温工作激光器[J]. 红外与毫米波学报, 2017, 36(3): 257. CHAI Xiao-Li, ZHANG Yu, LIAO Yong-Ping, HUANG Shu-Shan, YANG Cheng-Ao, SUN Yao-Yao, XU Ying-Qiang, NIU Zhi-Chuan. High power GaSb-based 2.6 μm room-temperature laser diodes with InGaAsSb/AlGaAsSb type I quantum-wells[J]. Journal of Infrared and Millimeter Waves, 2017, 36(3): 257.