红外与毫米波学报, 2017, 36 (3): 257, 网络出版: 2017-07-05   

高功率GaSb基2.6微米InGaAsSb/AlGaAsSb I型量子阱室温工作激光器

High power GaSb-based 2.6 μm room-temperature laser diodes with InGaAsSb/AlGaAsSb type I quantum-wells
作者单位
1 中国科学院半导体研究所 超晶格实验室, 北京 100083
2 中国科学技术大学 量子信息与量子科技前沿协同创新中心, 安徽 合肥 230026
引用该论文

柴小力, 张宇, 廖永平, 黄书山, 杨成奥, 孙姚耀, 徐应强, 牛智川. 高功率GaSb基2.6微米InGaAsSb/AlGaAsSb I型量子阱室温工作激光器[J]. 红外与毫米波学报, 2017, 36(3): 257.

CHAI Xiao-Li, ZHANG Yu, LIAO Yong-Ping, HUANG Shu-Shan, YANG Cheng-Ao, SUN Yao-Yao, XU Ying-Qiang, NIU Zhi-Chuan. High power GaSb-based 2.6 μm room-temperature laser diodes with InGaAsSb/AlGaAsSb type I quantum-wells[J]. Journal of Infrared and Millimeter Waves, 2017, 36(3): 257.

参考文献

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[2] Belenky G, Shterengas L, Kipshidze G, et al. Type-I diode lasers for spectral region above 3 μm[J]. IEEE Journal of Selected Topics in Quantum Electronics. 2011, 17(5):1426-1434.

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[4] Barat D, Angellier J, Vicet A, et al. Antimonide-based lasers and DFB laser diodes in the 2-2.7 μm wavelength range for absorption spectroscopy [J]. Applied Physics B. 2008, 90(2):201-204.

[5] YANG Cheng-Ao, ZHANG Yu, LIAO Yong-Ping, et al. 2μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography [J]. Chinese Physics B. 2016, 25(2):024204.

[6] SHterengas L, Liang R, Kipshidze G, et al. Type-I quantum well cascade diode lasers emitting near 3 μm [J]. Applied Physics Letters. 2013, 103:121108.

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[8] Garbuzov D Z, Lee H, Khalfin V, et al. 2.3-2.7 μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers [J]. IEEE Photonics Technology Letters. 1999, 11(7):794-796.

[9] XING Jun-Liang, ZHANG Yu, LIAO Yong-Ping, et al. Room-temperature operation of 2.4 μm InGaAsSb/AlGaAsSb quantum-well laser diodes with low-threshold current density [J]. Chinese Physics Letters. 2014, 31(5):054204.

[10] Sifferman S D, Nair H P, Salas R, et al. Highly strained mid-infrared type-I diode lasers on GaSb[J]. IEEE Journal of Selected Topics in Quantum Electronics. 2015, 21(6):1502410.

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[13] Kaspi R, Chunte A, Tim C, et al. GaSb-based >3 μm laser diodes grown with up to 2.4% compressive strain in the quantum wells using strain compensation [J]. Journal of Crystal Growth. 2015, 424(15):24-27.

[14] XING Jun-Liang, ZHANG Yu, XU Ying-Qiang, et al. High quality above 3 μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy [J]. 2013 Chinese Physics B. 23(1):017805.

[15] LIAO Yong-Ping, ZHANG Yu, XING Jun-Liang, et al. High power laser diodes of 2 μm AlGaAsSb/InGaSb type I quantum-wells [J]. Journal of Semiconductors. 2015, 36(5):054007.

[16] Suchalkin S, Jung S, Kipshidze G,et al. GaSb based light emitting diodes with strained InGaAsSb type I quantum well active regions [J]. Applied Physics Letters. 2008, 93:081107.

柴小力, 张宇, 廖永平, 黄书山, 杨成奥, 孙姚耀, 徐应强, 牛智川. 高功率GaSb基2.6微米InGaAsSb/AlGaAsSb I型量子阱室温工作激光器[J]. 红外与毫米波学报, 2017, 36(3): 257. CHAI Xiao-Li, ZHANG Yu, LIAO Yong-Ping, HUANG Shu-Shan, YANG Cheng-Ao, SUN Yao-Yao, XU Ying-Qiang, NIU Zhi-Chuan. High power GaSb-based 2.6 μm room-temperature laser diodes with InGaAsSb/AlGaAsSb type I quantum-wells[J]. Journal of Infrared and Millimeter Waves, 2017, 36(3): 257.

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