红外技术, 2015, 37 (2): 105, 网络出版: 2015-03-23
分子束外延锗基碲镉汞薄膜原位砷掺杂研究
Research on In-situ As-doped HgCdTe Thin Film Growth on Ge-base by MBE
补充材料
覃钢, 李东升, 李艳辉, 杨春章, 周旭昌, 张阳, 谭英, 左大凡, 齐航. 分子束外延锗基碲镉汞薄膜原位砷掺杂研究[J]. 红外技术, 2015, 37(2): 105. QIN Gang, LI Dong-sheng, LI Yan-hui, YANG Chun-zhang, ZHOU Xu-chang, ZHANG Yang, TAN Ying, ZUO Da-fan, QI Hang. Research on In-situ As-doped HgCdTe Thin Film Growth on Ge-base by MBE[J]. Infrared Technology, 2015, 37(2): 105.