基于金属-半导体-金属结构的Bi<sub>2</sub>Te<sub>3</sub>室温高响应率太赫兹探测器

基于二维拓扑绝缘体Bi2Te3材料利用微纳工艺制备了金属-拓扑绝缘体-金属(MTM)结构的太赫兹光电探测器.器件在0.022 THz的响应率可达2×103 A/W，噪声等效功率(NEP)低于7.5×10-15 W/Hz1/2，探测率D*高于1.62 ×1011 cm·Hz1/2/W；在0.166 THz的响应率可达281.6 A/W，NEP低于5.18×10-14 W/Hz1/2，D*高于2.2×1010 cm·Hz1/2/W；在0.332 THz的响应率可达7.74 A/W，NEP低于1.75×10-12 W/Hz1/2，D*高于6.7 ×108 cm·Hz1/2/W；同时器件在太赫兹波段具有小的时间常数(7~8 μs).该项工作突破了传统光子探测的带间跃迁，实现了可室温工作、高响应率、高速响应以及高灵敏度的太赫兹探测器件.

Abstract

In this study, a metal-topological insulator-metal (MTM) structure terahertz photodetector was fabricated based on a two-dimensional topological insulator Bi2Te3 material using a micro-nano process. The responsivity of device reaches 2×103 A/W at 0.02 THz, the noise equivalent power (NEP) is lower than 7.5×10-15 W/Hz1/2, and the detectivity D* is higher than 1.62×1011 cm·Hz1/2 /W. The responsivity is up to 281.6 A/W at 0.166 THz, NEP is lower than 5.18×10-14 W/Hz1/2, D* is higher than 2.2×1010 cm·Hz1/2/W. The responsivity is up to 7.74 A/W at 0.332 THz, NEP is lower than1.75×10-12 W/Hz1/2, D* is higher than 6.7×108 cm·Hz1/2/W. At the same time, the response time of device is 7~8 μs in the terahertz band. This work breaks through the inter-band transition of traditional photon detection, and realizes terahertz detectors with room temperature operation, high response rate, high speed response and high sensitivity.

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徐新月, 张晓东, 吴敬, 江林, 吴彩阳, 姚娘娟, 曲越, 周炜, 尹一鸣, 黄志明. 基于金属-半导体-金属结构的Bi₂Te₃室温高响应率太赫兹探测器[J]. 红外与毫米波学报, 2019, 38(4): 04459. XU Xin-Yue, ZHANG Xiao-Dong, WU Jing, JIANG Lin, WU Cai-Yang, YAO Niang-juan, QU Yue, ZHOU Wei, YIN Yi-Ming, HUANG Zhi-Ming. High responsivity Bi₂Te₃-based room temperature terahertz detector based on metal-semiconductor-metal structure[J]. Journal of Infrared and Millimeter Waves, 2019, 38(4): 04459.

基于金属-半导体-金属结构的Bi₂Te₃室温高响应率太赫兹探测器

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